Light emission of silicon oxynitride films prepared by reactive sputtering of silicon

Jou, Shyankay; Liaw, I-Che; Cheng, Yung‐Chen; Li, Chia-Hui

doi:10.1016/j.jlumin.2012.06.037

Cited by 14 publications

(17 citation statements)

References 38 publications

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“…In our previous work [48,59], from the results of XPS measurements, the existence of the N x -Si-O y bonding configuration was also found in our N-type a-SiN x O y films. As we know, in a-SiN x films, the structure of paramagnetic Si dangling bond (K 0 ) defect consists of a center Si atom bonded to three N atoms and an unpaired electron (-Si=N).…”

Section: Role Of Oxygen Bonding and N-si-o Bonding Defectssupporting

confidence: 81%

“…In recent years, Ruggeri et al [47] reported that the luminescent signal in a-SiO x N y layer was affected by silicon chemical environment induced by IR annealing inside the amorphous SiON matrix. Jou et al [48] reported PL characteristics of a-SiO x N y films, which were prepared by reactive sputtering of silicon. The PL spectra with blue and green peaks were observed.…”

Section: Pl Properties and Recombination Mechanisms In A-sio X N Y Filmsmentioning

confidence: 99%

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Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

et al. 2019

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Silicon oxynitride films are one kind of important gate dielectric materials for applications in the fabrication of silicon CMOS integrated circuits (ICs), which have been widely and deeply studied. However, with the significant demand of the technologies for Si-based monolithic optoelectronic ICs, the research efforts on the optoelectronic applications of these materials have been continually increasing, particularly in the study of light emission properties and recombination mechanisms. In this paper, we first briefly outline the present photoluminescence (PL) mechanisms in amorphous silicon oxynitride (a-SiO x N y) films. Since, the PL properties and recombination processes are affected by both structural disorder and chemical disorder, the PL mechanism has been still unclear and even controversial until now. Among these various PL recombination models, the band tail states and defect state models have gained general consensus. Recently, a N-Si-O bond defect model has been reported, which depends on relative atom concentration of oxygen and nitrogen in the silicon oxynitride materials. It has been revealed that oxygen bonding plays a key role, not only in reducing the structural disorder, but also in creating N-Si-O (N x) defect states in the band gap. The characteristics of two models, namely band tail and N-Si-O bond defects, have been discussed in detail. Finally, it has been shown that by controlling the chemical composition of these non-stoichiometric silicon oxynitride materials, the optical and electronic properties can be improved. Keywords: amorphous silicon oxynitride (a-SiN x O y), PL mechanism, band tail model, N-Si-O bond defect model, a-SiN x O y LED

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Section: Role Of Oxygen Bonding and N-si-o Bonding Defectssupporting

confidence: 81%

Section: Pl Properties and Recombination Mechanisms In A-sio X N Y Filmsmentioning

confidence: 99%

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

et al. 2019

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“…The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films Pengzhan Zhang, 1,2 Kunji Chen, 1,a) Zewen Lin, 1 Hengping Dong, 3 Wei Li, 1 Last year, we have reported that the internal quantum efficiency of photoluminescence (PL) from amorphous silicon oxynitride (a-SiN x O y ) films has been achieved as high as 60%. The present work intensively investigated the mechanisms for tunable PL in the 2.05-2.95 eV range from our aSiN x :O films, by using a combination of optical characterizations, X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) measurements.…”

mentioning

confidence: 99%

“…As a kind of electronic and photoelectronic materials, the importance of the amorphous silicon oxynitride (aSiN x O y ) films is continuously increasing, because it is not only as an insulation or a passivation layer for integrated circuits 1 and thin film solar cells 2 but also as a potential optical materials for light emitting devices. 3 For the study of optical characteristic of plasma enhanced chemical vapor deposited (PECVD) a-SiN x O y films, there were some papers have been published, [4][5][6][7] in which most of them studied a-SiN x O y films contain large percentage oxygen atoms (!10%), and exhibit a broad photoluminescence (PL) spectrum with a peak energy around 1.4-3.2 eV depending on the Si, N, O relative atom percentage. They usually explain the PL is due to the radiative recombination between localized band-tail states associated with Si-N bonds similar to that in a-SiN x films.…”

mentioning

confidence: 99%

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The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

Zhang

Chen

Lin

et al. 2015

Applied Physics Letters

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Last year, we have reported that the internal quantum efficiency of photoluminescence (PL) from amorphous silicon oxynitride (a-SiNxOy) films has been achieved as high as 60%. The present work intensively investigated the mechanisms for tunable PL in the 2.05–2.95 eV range from our a-SiNx:O films, by using a combination of optical characterizations, X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) measurements. The results of XPS, EPR, and photoluminescence excited measurements indicated that the incorporation of oxygen atoms into silicon nitride (a-SiNx) networks not only reduced the band tail structure disorder (Urbach tail width EU) but also created N-Si-O (Nx) defect states in the band gap. We have discovered the distinctive PL characteristics from a-SiNx:O films with various NH3/SiH4 ratios. The PL peak energy (EPL) is independent of the excitation energy (Eexc) and the PL intensity (IPL) is regardless of the optical band gap (Eopt) but is proportional to the Nx defects concentration, both of which are completely different from the PL characteristics by band tail states recombination mechanism, in which the EPL is proportional to Eexc (when Eexc ≤ Eopt) and the IPL is dependent on the relative position of Eexc and Eopt. Based on the N-Si-O bonding configurations and the distinctive PL characteristics, the radiative recombination mechanism through the N-Si-O defect states has been proposed, by which the performance of stimulated emission may be realized in this kind of a-SiNx:O films.

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The Role of N–Si–O Defect States in Optical Gain from an a‐SiN_xO_y/SiO₂ Waveguide and in Light Emission from an n‐a‐SiN_xO_y/p‐Si Heterojunction LED

Lin

Chen

Zhang

et al. 2018

Physica Status Solidi (a)

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Amorphous silicon oxynitride (a-SiN x O y ) film is a kind of new luminescent material, which exhibits highly efficient light emission from luminescent N-Si-O defect states. In this work, the measurements of steady-state photoluminescence (SSPL), temperature-dependent photoluminescence (TDPL), and nanosecond time-resolved photoluminescence (ns-TRPL) are combined to further verify the role of luminescent N-Si-O defect states on the performance of photoluminescence (PL), electro-luminescence (EL), and optical gain, etc., for both intrinsic and doped a-SiN x O y films. The results indicate that both PL and EL originate from luminescent N-Si-O defect states, which is totally different behavior from that observed from band tail states in normal amorphous semiconductors. In the case of device applications, the properties of optical gain in an a-SiN x O y / SiO 2 waveguide are investigated. Based on the signal of amplified spontaneous emission (ASE) coming from the edge of the waveguide, an optical gain coefficient higher than 100 cm À1 is obtained by using variable stripe length (VSL) measurements. For another application example, it is found that radiative recombination via luminescent N-Si-O defect states can also contribute to the EL observed from an n-a-SiN x O y /p-Si heterojunction LED, in which the light emission power efficiency is determined to be five times higher than that in an a-SiN x O y MIS LED.

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Light emission of silicon oxynitride films prepared by reactive sputtering of silicon

Cited by 14 publications

References 38 publications

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

The Role of N–Si–O Defect States in Optical Gain from an a‐SiN_xO_y/SiO₂ Waveguide and in Light Emission from an n‐a‐SiN_xO_y/p‐Si Heterojunction LED

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Light emission of silicon oxynitride films prepared by reactive sputtering of silicon

Cited by 14 publications

References 38 publications

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

The Role of N–Si–O Defect States in Optical Gain from an a‐SiNxOy/SiO2 Waveguide and in Light Emission from an n‐a‐SiNxOy/p‐Si Heterojunction LED

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The Role of N–Si–O Defect States in Optical Gain from an a‐SiN_xO_y/SiO₂ Waveguide and in Light Emission from an n‐a‐SiN_xO_y/p‐Si Heterojunction LED