Light Emission in ZnTe by Electrical Injection

Reverse biased electroluminescence is observed in In-alloyed ZnTe (P-doped, ∼1018/cm3) diode at liq. N2 temperature. There are two characteristic emission bands in the luminescence spectrum. One is a green band, about 60 Å in width, centred at 5400 Å. The other is a red band and extends from about 5800 Å to 7000 Å. The former is attributed to P-centre emission, while the latter to In-centre emission. The weight of the two emission bands change with the alloying temperature, higher temperature favouring the latter. The emission mechanism is explained as a breakdown in the metal-semi=insulator-semiconductor (p-type) structure.

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Light Emission in ZnTe by Electrical Injection

Cited by 4 publications

References 2 publications

Injection electroluminescence of zinc telluride

Injection electroluminescence of zinc telluride

Room temperature electroluminescence in semi-insulating zinc telluride

Reverse Biased Electroluminescence in Alloyed ZnTe Diodes

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