2013
DOI: 10.1063/1.4816717
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Light emission from thulium silicates and oxides for optical amplifiers on silicon in the extended optical communications band

Abstract: Films composed of Tm2Si2O7 and Tm2O3 grains formed on SiO2/Si substrates by radio magnetic sputtering and subsequent thermal annealing up to 1250 °C were characterized by synchrotron grazing incidence X-ray diffraction, cross-sectional transmission microscopy, and micro photoluminescence (PL) measurements. The films composed of triclinic (type-B) and monoclinic (type-C) Tm2Si2O7 grains on SiO2/Si and Tm2O3 grains on Si exhibit photoluminescence at the wavelength of about 1620 nm for the silicates and 1630 nm f… Show more

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“…PL intensity enhancement of ErYb silicates has been reported, and the sensitization effect and the reduction of the self-quenching have been discussed [30][31][32]. In comparison to the ErYb silicate system, the Er x Yb y Y 2−x−y SiO 5 system can control the two effects separately by changing the contents x and y.…”
Section: B Pl Emission and The Energy Transfer Dynamicsmentioning
confidence: 99%
“…PL intensity enhancement of ErYb silicates has been reported, and the sensitization effect and the reduction of the self-quenching have been discussed [30][31][32]. In comparison to the ErYb silicate system, the Er x Yb y Y 2−x−y SiO 5 system can control the two effects separately by changing the contents x and y.…”
Section: B Pl Emission and The Energy Transfer Dynamicsmentioning
confidence: 99%