Light emission from nanoscale silicon heterojunctions

Kuzmin, Roman; Bargaev, Nikolay; Klyachkin, L. E.; Malyarenko, A. M.; Mashkov, V. A.

doi:10.1063/1.4848488

Cited by 1 publication

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“…The distortion of the DOS involved into the recombination process appeared through the spectral line-shape changes of the near-infrared electroluminescence from nanoscale silicon p + -n junctions. The changes were revealed at temperatures under T ≈ 146 K [10]. This temperature coincides with the critical temperature of the superconductor transition previously found in the nanoscale silicon p + -n junctions [11].…”

Section: Resultssupporting

confidence: 85%

The effect of dipole boron centers on the electroluminescence of nanoscale silicon p+−n junctions

Bagraev¹,

Klyachkin²,

Kuzmin³

et al. 2014

AIP Conference Proceedings

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Abstract. Nanoscale silicon p + -n junctions with very high concentration of boron, 5 10 21 cm -3 , are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree of the linear polarization along preferred crystallographic axis which can be controlled by the lateral voltage applied in the plane of the p + -n junction. Such behavior together with the temperature dependence of the EL intensity is attributed to the presence of the self-compensating dipole boron centers, B + -B -, with negative correlation energy which are identified using the ESR technique in the nanoscale silicon p + -n junctions heavily doped with boron. The model of the recombination process though the negative-U dipole boron centers controlling the optical properties of the nanoscale silicon p + -n junctions is proposed.

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Section: Resultssupporting

confidence: 85%