Light Emission from InGaN Quantum Wells Grown on the Facets of Closely Spaced GaN Nano-Pyramids Formed by Nano-Imprinting

Abstract

In x Ga 1Àx N/GaN quantum wells have been grown on the f10 11g facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips. #

Continuous wavelength modulation of semi‐polar plane InGaN/GaN MQWs based on vapor‐phase‐diffusion‐based selective‐area pyramidal growth

“…Next, hexagonal GaN pyramids were grown with MOVPE, using a condition at a low temperature (1150 °C) and a low V/III ratio 4, 5: the partial pressures of TMG and NH 3 were 0.093 and 74.0 mbar, respectively. We stopped the growth of GaN pyramids in the middle so that we can observe both semi‐polar {11–22} planes and polar (0001) planes.…”

High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets

“…An increasing indium flow leads to a higher strain and the aforementioned redistribution of the indium, resulting in the expected formation of local composition fluctuations 30. Recent measurements by another group 31 showed that a redistribution of Indium can be also observed for smaller pyramids, in this case, however, the indium incorporates preferably at the base of the pyramid, leading in a redshift toward the pyramid base.…”

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

“…1(b)] after the short GaN facet recovery growth. With sufficient growth time, the NR tips would form into a self-limiting pyramid shape, [27][28][29] with the slower growing and more stable semipolar f1-101g facets causing extinction of the faster growing planes 30 at convex surfaces. Similarly, extinction of the faster growing a-planes will occur on the vertical sidewalls of the NRs, leaving structures of hexagonal cross-section, terminated by m-planes.…”