Light emission from hot electrons in zinc sulphide

Rigby, N E; Allen, J. W.

doi:10.1088/0022-3719/21/19/003

Cited by 11 publications

(3 citation statements)

References 25 publications

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“…The next question is that of whether the two transitions 1 and 3 (see figure 5) are the only likely ones which explain the observed emission. To answer the question, Ostrovskii and Korotchenkov (2000) pointed out quite recently that radiative transitions of hot electrons between different valleys of the conduction band (transition 2 for the X and valleys in figure 5) should be taken into account in analogy with previous observations (Turvey andAllen 1973, Rigby andAllen 1988). Such transitions are only allowed when the momentum is conserved, e.g.…”

Section: Defining Light-emitting Mechanismsmentioning

confidence: 90%

“…A completely different explanation has been suggested for the light-emitting mechanismby interpreting the broad-band spectrum as radiative emission of hot electrons in the conduction band (Ostrovskii and Korotchenkov 2000). A similar approach has been used to explain the broad-band electroluminescence spectra in ZnS Schottky diodes which extend from the visible to the near infrared region (Rigby and Allen 1988). In this connection, the important question is whether or not carrier heating does indeed occur in acoustic fields.…”

Section: Defining Light-emitting Mechanismsmentioning

confidence: 99%

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Acoustically driven emission of light in granular and layered semiconductors: recent advances and future prospects

Korotchenkov¹,

Goto²,

Grimmeiss³

et al. 2001

Rep. Prog. Phys.

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Acoustic driving techniques can produce luminescence in semiconductors quite efficiently. A mixture of grain particles, for example, emits light when driven by sufficiently intense acoustic fields. This effect is therefore particularly interesting for exploring the dynamics of granular solids. By applying this novel technique, further insight is gained when monitoring the driving-induced evolution of dense particle arrangements. Another subject in this article is the description of the basic physics that governs acoustically driven relaxation of photoexcited carriers in quantum well systems. Due to these properties, µs-prolonged recombination processes and periodic pumping of exciton emission in a quantum dot are observed, which offer new possibilities for tailoring multilayer structures of semiconductors. A variety of potential applications using these phenomena are envisaged.

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Section: Defining Light-emitting Mechanismsmentioning

confidence: 90%

Section: Defining Light-emitting Mechanismsmentioning

confidence: 99%

Acoustically driven emission of light in granular and layered semiconductors: recent advances and future prospects

Korotchenkov¹,

Goto²,

Grimmeiss³

et al. 2001

Rep. Prog. Phys.

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“…In the presence of paramagnetic centers, the exchange mechanism that includes the spin-flip scattering is also possible [3]. Radiative intraband transitions have been observed in reverse biased diodes of II-VI, III-V compounds, Si, Ge, and SiC [2,4]. In particular, such transitions have been studied in ZnS Shottky diodes [2,4] and in ZnS thinfilm electroluminescent structures (TFELS) excited by high alternating electric fields [5].…”

Section: Introductionmentioning

confidence: 99%

Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr

Vlasenko¹

2005

Semicond. phys. quantum electron. optoelectron.

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A structureless emission in the visible region was revealed in ZnS:Cr thin-film electroluminescent structures (TFELS) apart the main near-infrared emission resulted from the 5 E → 5 T 2 transition in the 3d shell of the Cr 2+ ion. This emission stems from intraband indirect transitions of hot electrons. The comparison between experimental intensity spectral dependence and the same dependence calculated for different mechanisms of the momentum relaxation shows that the scattering on charged impurities takes place during this emission. The Cr + ions existing in ZnS:Cr in addition to predominant Cr 2+ ions serve as scattering charge centers. This is confirmed by study of the magnetic field (H) effect on the intensity (I) of the hot electron emission at 4.2 K. The experimental dependence I(H) coincides with the calculated magnetic field dependence of the exchange scattering cross-section of Cr + ion with the spin 5/2 and gfactor 2. This result also indicates that both the Coulomb interaction with Cr + ions and the exchange scattering on them present during the hot electron emission in the ZnS:Cr TFELS.

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Sonoluminescence effects in ZnS materials

Ostrovskii

Korotchenkov

2000

Journal of Physics and Chemistry of Solids

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Light emission from hot electrons in zinc sulphide

Cited by 11 publications

References 25 publications

Acoustically driven emission of light in granular and layered semiconductors: recent advances and future prospects

Acoustically driven emission of light in granular and layered semiconductors: recent advances and future prospects

Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr

Sonoluminescence effects in ZnS materials

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