Light-driven permanent transition from insulator to conductor

Rana, Dhan; Agarwal, Sahil; Islam, Minhazul; Banerjee, Amitava; Uberuaga, Blas P.; Saadatkia, Pooneh; Dulal, Prabin; Adhikari, Naresh; Butterling, Maik; Liedke, Maciej Oskar; Wagner, A.; Selim, F. A.

doi:10.1103/physrevb.104.245208

Cited by 6 publications

(2 citation statements)

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“…The position of these localized states depends on many factors such as the charge state, size, and chemistry of these point defects [ 1 ] and it can be modified by external stimuli. [ 2 ] The positions or energy levels of these states in the bandgap dictate the electronic, optical, and electrical properties of bandgap materials [ 3,4 ] and it is vital to measure their energy levels/depths to understand and control the material properties. However, the available techniques for energy‐level measurements are limited and often not suitable for many material systems.…”

Section: Introductionmentioning

confidence: 99%

Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

Selim

2023

Physica Status Solidi (a)

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Thermoluminescence (TL) or thermally stimulated luminescence (TSL) spectroscopy is based on liberating charge carriers from traps in the bandgap by providing enough thermal energy to overcome the potential barrier of the traps. It provides a powerful tool to measure the positions of the localized states/traps in the bandgap. Despite that, its applications in semiconductors are very limited. Herein, the basics of TL spectroscopy and the recent advances in the technique with focus on cryogenic thermally stimulated photoemission spectroscopy (C‐TSPS) which extends TL measurements to cryogenic regime and allows the detection of very low concentrations of shallow and deep localized states is discussed. One goal herein is to introduce the reader to the use of TL and C‐TSPS in the characterization of semiconductors, explaining how it can be applied and demonstrating its advantages as a powerful tool for measuring shallow donor/acceptor ionization energies in semiconductors and as a method for characterizing compensating defects. The article also discusses interesting potential applications of C‐TSPS in new research areas such as corrosion and formation of oxide layers on metal surfaces.

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Section: Introductionmentioning

confidence: 99%

Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

Selim

2023

Physica Status Solidi (a)

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“…Such effect has been used to write low resistance path in STO which can then be used as erasable memories [10]. Rana et al reported permanent transition from insulator to conductor behavior in gallium oxide after exposing the oxide layer repeatedly to sub bandgap light [11]. In any case, semiconductors oxides are likely to present PPC at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Toward both p- and n-doping of hexagonal boron nitride using sub-bandgap illumination

Perepeliuc

Gujrati

Srivastava

et al. 2023

Oxide-Based Materials and Devices XIV

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Giant room temperature persistent photoconductivity in hexagonal boron nitride under UVC irradiation has been demonstrated. Scanning lasers dots on sample surface at two different wavelengths (213 and 266 nm) have been used to induce such effect, the former being more efficient. Conductivity has been increased by 6 orders of magnitude upon illumination. Such increase persists significantly for at least 6 months. Decrease of photoinduced current has been shown to be 10% more important for samples irradiated under vacuum than for those irradiated under atmospheric pressure. Type of photoinduced carriers were investigated using p-hBN/n-AlGaN junctions through C/V measurements. P-type carriers are believed to be generated by 213 nm illumination whereas 266 nm laser is supposed to trigger n-type carriers.

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