Light-controlled resistive switching and voltage-controlled photoresponse characteristics in the Pt/CeO2/Nb:SrTiO3 heterostructure

Xie, Shuai; Pei, Lei; Li, Meiya; Zhu, Yongdan; Cheng, Xiangyang; Ding, Hao; Xiong, Rui

doi:10.1016/j.jallcom.2018.11.161

Cited by 25 publications

(15 citation statements)

References 43 publications

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“…The XPS result indicates the presence of the Ce 3+ and Ce 4+ oxidation states (Figure e), and the ratio is 0.1. Moreover, the XPS result in Figure f confirms that 5.6% oxygen vacancies existed in the CeO 2 film which is attributed to the high temperature during the sputtering process. , A detailed XPS analysis process is shown in Supporting Note 1.…”

Section: Resultsmentioning

confidence: 67%

Synaptic and Gradual Conductance Switching Behaviors in CeO₂/Nb–SrTiO₃ Heterojunction Memristors for Electrocardiogram Signal Recognition

Geng

Liu

et al. 2023

ACS Appl. Mater. Interfaces

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The synaptic properties of memristors have been widely studied. However, researchers are still committed to solving various challenges, including the study of highly reliable memristors with comprehensive synaptic functions and memristors that simulate highly complex neurological learning rules. In this work, we report a CeO 2 /Nb−SrTiO 3 heterojunction memristor whose conductance could be gradually tuned under both positive and negative pulse trains. Due to the gradual conductance switching behavior and the high switching ratio (10 5 ), the CeO 2 /Nb−SrTiO 3 heterojunction memristor could dutifully mimic biosynaptic functions, including excitatory/inhibitory postsynaptic current (EPSC/IPSC), paired-pulse facilitation and depression (PPF/PPD), spike amplitude-dependent plasticity (SADP), spike duration-dependent plasticity (SDDP), spike rate-dependent plasticity (SRDP), paired/triplet spiking-time-dependent plasticity (STDP), and Bienenstock−Cooper−Munro (BCM) rules. Moreover, a convolutional neural network based on the memristors is constructed to identify the electrocardiogram (ECG) data sets to realize the diagnosis of diseases with a recognition accuracy of 93%. Besides, the recognition accuracy of the handwriting digit reaches 96%. These studies broaden the research scope of high-level synaptic behavior and lay a foundation for the future full synaptic memristor networks.

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Section: Resultsmentioning

confidence: 67%

Synaptic and Gradual Conductance Switching Behaviors in CeO₂/Nb–SrTiO₃ Heterojunction Memristors for Electrocardiogram Signal Recognition

Geng

Liu

et al. 2023

ACS Appl. Mater. Interfaces

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“…Moreover, the rectifying ratio (I -4V /I +4V ) was enhanced from ∼1 to 8.5 × 10 3 with the insertion of the HAO dielectric layer, indicating that the electrical transport properties might be dominated by the BCZT/HAO/Si interface. 31,32 From the band diagram, it is clear that the high band offsets between HAO and Si will reduce the leakage current in MFIS. Moreover, the absence of oxygen defects in HAO, as shown by XPS, will reduce the leakage current when compared to the structures without HAO.…”

Section: Resultsmentioning

confidence: 99%

HfO₂–Al₂O₃ Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr_0.2Ti_0.8)O₃-0.5(Ba_0.7Ca_0.3)TiO₃ Thin Film

Silva

Sekhar

Veltruská

et al. 2020

ACS Appl. Electron. Mater.

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In this work, the ferroelectric and fatigue characteristics of Au/0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 (BCZT)/Si metal−ferroelectric−semiconductor (MFS) structures are investigated. Moreover, the effect of introducing a thin dielectric HfO 2 − Al 2 O 3 (HAO) layer with different thicknesses between the BCZT layer and the Si substrate on the ferroelectric characteristics in the metal−ferroelectric−insulator−semiconductor (MFIS) configuration is evaluated. It is evidenced that the insertion of the HAO layer with a thickness of 8 nm improves the memory window of the capacitance−voltage (C−V) curves by 106% compared to the value obtained in the MFS structure and reduces the leakage currents. Furthermore, the Au/BCZT/HAO (8 nm)/Si structure shows a remarkable remnant polarization (P r ) of 7.8 μC/cm 2 , with a coercive voltage of 1.9 V. The obtained value for P r corresponds to a six times enhancement when compared to the value obtained in the Au/BCZT/Si structure. In addition, the fatigue studies reveal that the P r obtained in the Au/BCZT/HAO/Si structure slightly decreases (3%) with continuous cycling, up to 10 9 cycles. The present work evidences that Au/BCZT/HAO/Si structures are promising for nonvolatile memory applications.

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“…present a photo‐induced multilevel RRAM based on Pt/CeO 2 /Nb: SrTiO 3 /In, of which structure and I – V behaviors are shown in Figure 13 a . [ 264 ] This device can be transformed among four states under the electric field, including the LRS, Intermediate state1 (IRS1), IRS2, and HRS (Figure 13b ). When the device is exposed to 405 nm light, the HRS increases significantly, while the other states are almost invariant, as shown in Figure 13c .…”

Section: Applications Of Photonic Memristive and Memristive‐like Devicesmentioning

confidence: 99%

Section: Applications Of Photonic Memristive and Memristive‐like Devicesmentioning

confidence: 99%

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Advances in Emerging Photonic Memristive and Memristive‐Like Devices

et al. 2022

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Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.

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Light-controlled resistive switching and voltage-controlled photoresponse characteristics in the Pt/CeO2/Nb:SrTiO3 heterostructure

Cited by 25 publications

References 43 publications

Synaptic and Gradual Conductance Switching Behaviors in CeO₂/Nb–SrTiO₃ Heterojunction Memristors for Electrocardiogram Signal Recognition

Synaptic and Gradual Conductance Switching Behaviors in CeO₂/Nb–SrTiO₃ Heterojunction Memristors for Electrocardiogram Signal Recognition

HfO₂–Al₂O₃ Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr_0.2Ti_0.8)O₃-0.5(Ba_0.7Ca_0.3)TiO₃ Thin Film

Advances in Emerging Photonic Memristive and Memristive‐Like Devices

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Light-controlled resistive switching and voltage-controlled photoresponse characteristics in the Pt/CeO2/Nb:SrTiO3 heterostructure

Cited by 25 publications

References 43 publications

Synaptic and Gradual Conductance Switching Behaviors in CeO2/Nb–SrTiO3 Heterojunction Memristors for Electrocardiogram Signal Recognition

Synaptic and Gradual Conductance Switching Behaviors in CeO2/Nb–SrTiO3 Heterojunction Memristors for Electrocardiogram Signal Recognition

HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film

Advances in Emerging Photonic Memristive and Memristive‐Like Devices

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Synaptic and Gradual Conductance Switching Behaviors in CeO₂/Nb–SrTiO₃ Heterojunction Memristors for Electrocardiogram Signal Recognition

Synaptic and Gradual Conductance Switching Behaviors in CeO₂/Nb–SrTiO₃ Heterojunction Memristors for Electrocardiogram Signal Recognition

HfO₂–Al₂O₃ Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr_0.2Ti_0.8)O₃-0.5(Ba_0.7Ca_0.3)TiO₃ Thin Film