Light-biased <i>IV</i> characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature

Richards, Robert D.; Rockett, Thomas B. O.; Nawawi, Mohd; Harun, Faezah; Mellor, A.; Wilson, Terence; Christou, C; Chen, S; David, J.P.R.

doi:10.1088/1361-6641/aad72a

Cited by 7 publications

(4 citation statements)

References 38 publications

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“…They attributed this to trapping of holes in the QWs. [ 50 ] Strain relaxation prevented them from investigating the higher numbers of QWs necessary for high efficiency. In 2018, Kim et al addressed this issue with a 50 period, strain‐balanced GaAsBi/GaAsP cell (grown by metal–organic vapor phase epitaxy).…”

Section: Recent Progress On Gaasbi Devicesmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi‐induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.

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Section: Recent Progress On Gaasbi Devicesmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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“…The increase of the number of quantum wells in the active region as a well as the applied reversed bias voltage is behind the increase of the depletion region, and consequently the capacitance increases. Due to the carrier distributions, the electron injection and the transport effects, our results demonstrate that the capacitance, which is essentially related to the internal properties of the MQW, used structures [26].…”

Section: Lifetimes Of Holes T Pmentioning

confidence: 83%

Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector

Sfina¹,

Ammar²,

Lazzari³

et al. 2020

Phys. Scr.

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In the present work, we will exhibit a theoretical analysis and optimization of electrical and optical characteristics of a short-wave infrared p-i-n detector closely lattice matched to conventional (001) InP substrate by the use of quaternary dilute bismide alloy InxGa1−xAs1−yBiy/InxGa1−xAs quantum wells as an active layer. The content of about 6% of Bismuth has been responsible of red-shift of the 50% cut-off wavelength from 2.2 towards 2.8 µm at room temperature, resulting in a band gap reduction of nearly 305 meV caused by the bismuth incorporation. The temperature dependence of zero-bias resistance area product (R0A) and bias dependent dynamic resistance of the designed structure have been investigated thoroughly to analyses the dark current contributions mechanisms that might limit the electrical performance of the considered structure. It was revealed that the R0A product of the detector is limited by thermal diffusion currents when temperatures are elevated whereas the ohmic shunt resistance contribution limits it when temperatures are low. The modeled heterostructure, reveals a comforting dark current of 1.25x10 -8 A at bias voltage of -10mV at 300 K. The present work demonstrates that the p-i-n detector based on compressively strained InxGa1−xAs1−yBiy quantum well is a potential candidate for achieving a short-wave infrared detection.

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“…There have been many studies on the material properties of GaAsBi [18][19][20][21][22][23][24][25][26]. In an experimental study of GaAs-Bi/GaAs multiple quantum well diodes to assess the potential of GaAsBi for photovoltaic applications [21], an open-circuit voltage (V oc ) decrease was observed, probably due to Biinduced disorder and the low growth temperature [21].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing

Kawata

Hasegawa

Matsumura

et al. 2021

Semicond. Sci. Technol.

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To evaluate the performance of GaNAsBi alloys as solar cell materials, a GaNAsBi double-heterostructure pin solar cell was fabricated using plasma-assisted solid source molecular beam epitaxy. The addition of even a small amount of N (less than 1%) to the GaAsBi alloy significantly reduces the short-circuit current density (J sc ) of the solar cell. However, after thermal annealing, J sc increases by ∼6.5 times. After thermal annealing, the GaN 0.006 As 0.966 Bi 0.028 solar cells (bandgap (E g ) = 1.15 eV) exhibited an open-circuit voltage (V oc ) of 0.35 V, J sc of 10.2 mA cm −2 , and fill factor of 0.56. Based on the Urbach energy of Ga(N)AsBi, the decreased crystallinity associated with the addition of N leads to poor characteristics of GaNAsBi solar cells compared with those GaAsBi solar cells.

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Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature

Cited by 7 publications

References 38 publications

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector

Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing

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