Light and current degradation of a-Si:H pin, nin and pip diodes detected with CPM

Ostendorf, H.-C.; Kusian, W.; Krühler, W.; Schwarz, R.

doi:10.1016/0022-3093(93)91084-g

Cited by 5 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…CPM [8,9] have been performed on samples before and after "forming", as well as on samples which were first degraded by forward current injection [7]. The spectra were normalized to a value corresponding to a light energy hv = 1.5 eV, based upon the assumption that the slope of the exponential Urbach tail measured by CPM is unaffected by these treatments.…”

Section: Constant Photocurrent Methods (Cpm) Measurementsmentioning

confidence: 99%

High Electric Field Forming of a-Si:H P-I-N Diodes

1995

View full text Add to dashboard Cite

Amorphous hydrogenated p-i-n diodes submitted to a high reverse bias for a long period of time undergo a metastable evolution which tends to improve their properties. A forming procedure based on this effect has been developed and leads to a significant decrease of the reverse current and increase of the breakdown voltage. In this paper, the mechanisms underlying this forming process have been investigated using the Constant Photocurrent Method (CPM) , (I-V) characteristics and Spectral Response under reverse bias. The effects of annealing and current induced defect creation have been studied. The forming process is found to be most consistent with a metastable increase in the dopant activation of the p-layer and a small decrease of the density of states in the i-layer.

show abstract

Section: Constant Photocurrent Methods (Cpm) Measurementsmentioning

confidence: 99%

High Electric Field Forming of a-Si:H P-I-N Diodes

1995

View full text Add to dashboard Cite

show abstract

“…1) Nevertheless, the lightinduced degradation of the a-Si:H films is one of the major problems. Staebler and Wronski 2) first reported this effect in a-Si:H films in 1977 and they also found that the light induced-degraded properties of the film can be recovered by annealing at temperatures above 150 C. Degradation effects were also observed after applying electric fields, 3) induced current 4) and elevated temperature. 5) To overcome this problem, many studies were performed with the goal of reducing and measuring the light-induced degradation of the films and cells.…”

Section: Introductionmentioning

confidence: 96%

Carrier Injection Related Stability of Intrinsic Hydrogenated Amorphous Silicon Film and Solar Cells

Park

Kim

Iftiquar

et al. 2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this paper, we report the stability of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells for various carrier injections. The intrinsic films were prepared with different hydrogen dilutions. We observed that the a-Si:H film had a 25.4% decline in photocurrent due to the carrier injection. The photoluminescence peak within 1.1 to 1.7 eV increased towards the lower photon energy, due to the bias stress. The Urbach energy for the film degraded from 59 to 85 meV under a similar condition. We also observed a 24% drop in efficiency of the solar cell, due to a forward bias stress for 10 h.

show abstract

High electric field forming of a-Si:H p-i-n diodes

Equer

Ilie

1995

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

Light and current degradation of a-Si:H pin, nin and pip diodes detected with CPM

Cited by 5 publications

References 4 publications

High Electric Field Forming of a-Si:H P-I-N Diodes

High Electric Field Forming of a-Si:H P-I-N Diodes

Carrier Injection Related Stability of Intrinsic Hydrogenated Amorphous Silicon Film and Solar Cells

High electric field forming of a-Si:H p-i-n diodes

Contact Info

Product

Resources

About