Light-activated resistive ozone sensing at room temperature utilizing nanoporous In2O3 particles: Influence of particle size

Nanostructured Materials for Room‐Temperature Gas Sensors

“…Wide‐bandgap semiconductors such as ZnO (3.4 eV) and SnO 2 (3.6 eV) can only be activated by UV illumination with a wavelength below 400 nm in order to operate at room temperature . Visible light activation of narrow‐bandgap metal oxides such as In 2 O 3 (2.6 eV) and WO 3 (2.8 eV) for room‐temperature gas sensing has been proposed . Since a lowering of the bandgap can be achieved through doping or fabrication of composite materials, it has been demonstrated that visible light activation can also be applied to wide‐bandgap semiconductors for room‐temperature gas‐sensing applications.…”

Advances in designs and mechanisms of semiconducting metal oxide nanostructures for high-precision gas sensors operated at room temperature

“…Instead, UV light can be used to activate and enhance the gas sensing performance of SMONs operated at RT. 380 The reported SMONs whose sensing properties can be improved by UV light are mainly ZnO, [381][382][383][384][385] In 2 O 3 , 386,387 TiO 2 388,389 and SnO 2 , 390,391 which have been summarized in Table 7.…”

“…Apart from the UV light, visible light (including blue light and white light) assisted RT gas sensors with enhanced performance have also been reported. 387,[398][399][400] Klaus et al 387 reported a blue light (460 nm) activated ozone gas sensor based on nanoporous In 2 O 3 particles, which showed a high response value of 200 and a low LOD of 50 ppb at RT. Geng et al 399 reported that a sensor made of Cu x O 1Ày /ZnO 1Àa nanocomposites showed enhanced NO 2 C = concentration; t res /t rec = response time/recovery time; LOD = limit of detection; response is defined as R a /R g (for reducing gases) or R g /R a (for oxidizing gases), R a : resistance of the sensor exposed to the reference, R g : resistance of the sensor exposed to the target.…”

Light-Activated Sub-ppm NO2 Detection by Hybrid ZnO/QD Nanomaterials vs. Charge Localization in Core-Shell QD

“…To reduce the power consumption of metal oxide gas sensors, the effective strategies, mainly include surface modification, additive doping and light activation (Wang et al, 2017;Xu and Ho, 2017;Zhu and Zeng, 2017). Most of the publications dealing with the gas sensor properties of semiconductor materials under illumination discussed the effects observed under UV light (Saura, 1994;Mishra et al, 2004;Malagu et al, 2005;De Lacy Costello et al, 2008;Peng et al, 2008Peng et al, , 2009Prades et al, 2009a,b;Carotta et al, 2011;Wang et al, 2011;Cui et al, 2013;Wagner et al, 2013;Klaus et al, 2015;Ilin et al, 2016;Nakate et al, 2016;Saboor et al, 2016;Trawka et al, 2016;Wongrat et al, 2016;Da Silva et al, 2017;Espid and Taghipour, 2017;Hsu et al, 2017;Hyodo et al, 2017;Wu et al, 2018). UV radiation with an energy exceeding the width of the band gap generates electron-hole pairs and thus increases conductivity.…”