Ligand Steric Profile Tunes the Reactivity of Indium Phosphide Clusters
Soren F. Sandeno,
Kyle J. Schnitzenbaumer,
Sebastian M. Krajewski
et al.
Abstract:Indium phosphide quantum dots have become an industrially relevant material for solid-state lighting and wide color gamut displays. The synthesis of indium phosphide quantum dots from indium carboxylates and tris(trimethylsilyl)phosphine (P(SiMe 3 ) 3 ) is understood to proceed through the formation of magic-sized clusters, with In 37 P 20 (O 2 CR) 51 being the key isolable intermediate. The reactivity of the In 37 P 20 (O 2 CR) 51 cluster is a vital parameter in controlling the conversion to quantum dots. Her… Show more
“…The carboxylate ligands show a binding mode distribution of nine chelating, three symmetric bridging, and 12 asymmetric bridging carboxylates. This affinity for asymmetric bridging carboxylates is consistent with other III–V cluster structures but the InAs seems to show an augmented ratio of the chelating binding mode in comparison to these other structures. , It is interesting to note that the L-type binding of water in those previously reported InP clusters forces bridging ligands into a monodentate binding mode. However, in the InAs cluster, the L-type binding of phosphines is to otherwise 3-coordinate indium atoms, none of which are simultaneously ligated by carboxylates (Figure S10).…”
Section: Resultssupporting
confidence: 89%
“…We note that the experimental absorption doublet is substantially red-shifted from the computationally predicted absorbance. However, the mismatch in energy is similar to that previously reported for comparable materials. , Finally, the simulated Raman modes show good agreement with those characterized experimentally, falling in the range of 160–280 cm –1 (Figures S21, S22, S23). These energies are similar to those reported for the TO, SO, and LO modes of InAs nanowires at approximately 218, 237, and 239 cm –1 , respectively …”
Section: Resultssupporting
confidence: 87%
“…The structure of this In 26 As 18 cluster appears to be related to a motif previously observed in InP, CdSe, and CdS. ,,,, We observe that our recently reported In 26 P 13 structure can be superimposed onto the In 26 As 18 structure, showing that the anion sublattice has a high degree of overlap (RMS = 0.323 Å), however the indium sublattice is substantially different (Figure S14). Observing the similarity in the pnictogen substructure leads us to hypothesize that the early stage InAs-395 intermediate likely has an As 13 sublattice that matches both the shape and stoichiometry of the P 13 sublattice of In 26 P 13 .…”
Section: Resultssupporting
confidence: 73%
“…Removal of the surface indium results in a nonstoichiometric core of [In 23 As 18 ] 15+ , which stands as a stark comparison to the previously reported core stoichiometries [In 21 P 20 ] 3+ and [In 14 P 13 ] 3+ in InP. , It becomes evident that the drastic change in core stoichiometry is driven by the abundant 3-coordinate As atoms that make up nearly half the number of As present in the structure. We have previously concluded that in InP, there is a 4-coordinate requirement for the pnictide in cluster materials that forces a cation-rich stoichiometry through a large number of surface In atoms, passivating the otherwise 3-coordinate P. We see here that this is not the case in InAs.…”
Section: Resultssupporting
confidence: 56%
“…This method has been used extensively in the characterization of metallic nanoclusters to unveil a deep, refined understanding of intermediate structures, growth pathways, and surface chemistry in those systems . While the number of reported semiconductor clusters is not as substantial, crystallography has demonstrated unprecedented phases that are not observable in the bulk, precise surface analysis of ligand binding modes and stoichiometries, and a more nuanced insight into the differences between clusters made up of different semiconducting materials. ,,, With a tenacious approach to structural characterization, the QD community will benefit from the same insights that have allowed great progress in the field of metallic nanoclusters. Toward that end, the structures of clusters as QD intermediates have been determined for a wide variety of the most common semiconducting QD materials, such as CdSe, CdS, and InP. ,,, However, many other material systems have identified the presence of magic-sized clusters spectroscopically but still lack full structural characterization of those intermediates. ,,− …”
The discovery of magic-sized clusters as intermediates in the synthesis of colloidal quantum dots has allowed for insight into formation pathways and provided atomically precise molecular platforms for studying the structure and surface chemistry of those materials. The synthesis of monodisperse InAs quantum dots has been developed through the use of indium carboxylate and As(SiMe 3 ) 3 as precursors and documented to proceed through the formation of magic-sized intermediates. Herein, we report the synthesis, isolation, and single-crystal X-ray diffraction structure of an InAs nanocluster that is ubiquitous across reports of InAs quantum dot synthesis. The structure, In 26 As 18 (O 2 CR) 24 (PR' 3 ) 3 , differs substantially from previously reported semiconductor nanocluster structures even within the III−V family. However, it can be structurally linked to III−V and II−VI cluster structures through the anion sublattice. Further analysis using variable temperature absorbance spectroscopy and support from computation deepen our understanding of the reported structure and InAs nanomaterials as a whole.
“…The carboxylate ligands show a binding mode distribution of nine chelating, three symmetric bridging, and 12 asymmetric bridging carboxylates. This affinity for asymmetric bridging carboxylates is consistent with other III–V cluster structures but the InAs seems to show an augmented ratio of the chelating binding mode in comparison to these other structures. , It is interesting to note that the L-type binding of water in those previously reported InP clusters forces bridging ligands into a monodentate binding mode. However, in the InAs cluster, the L-type binding of phosphines is to otherwise 3-coordinate indium atoms, none of which are simultaneously ligated by carboxylates (Figure S10).…”
Section: Resultssupporting
confidence: 89%
“…We note that the experimental absorption doublet is substantially red-shifted from the computationally predicted absorbance. However, the mismatch in energy is similar to that previously reported for comparable materials. , Finally, the simulated Raman modes show good agreement with those characterized experimentally, falling in the range of 160–280 cm –1 (Figures S21, S22, S23). These energies are similar to those reported for the TO, SO, and LO modes of InAs nanowires at approximately 218, 237, and 239 cm –1 , respectively …”
Section: Resultssupporting
confidence: 87%
“…The structure of this In 26 As 18 cluster appears to be related to a motif previously observed in InP, CdSe, and CdS. ,,,, We observe that our recently reported In 26 P 13 structure can be superimposed onto the In 26 As 18 structure, showing that the anion sublattice has a high degree of overlap (RMS = 0.323 Å), however the indium sublattice is substantially different (Figure S14). Observing the similarity in the pnictogen substructure leads us to hypothesize that the early stage InAs-395 intermediate likely has an As 13 sublattice that matches both the shape and stoichiometry of the P 13 sublattice of In 26 P 13 .…”
Section: Resultssupporting
confidence: 73%
“…Removal of the surface indium results in a nonstoichiometric core of [In 23 As 18 ] 15+ , which stands as a stark comparison to the previously reported core stoichiometries [In 21 P 20 ] 3+ and [In 14 P 13 ] 3+ in InP. , It becomes evident that the drastic change in core stoichiometry is driven by the abundant 3-coordinate As atoms that make up nearly half the number of As present in the structure. We have previously concluded that in InP, there is a 4-coordinate requirement for the pnictide in cluster materials that forces a cation-rich stoichiometry through a large number of surface In atoms, passivating the otherwise 3-coordinate P. We see here that this is not the case in InAs.…”
Section: Resultssupporting
confidence: 56%
“…This method has been used extensively in the characterization of metallic nanoclusters to unveil a deep, refined understanding of intermediate structures, growth pathways, and surface chemistry in those systems . While the number of reported semiconductor clusters is not as substantial, crystallography has demonstrated unprecedented phases that are not observable in the bulk, precise surface analysis of ligand binding modes and stoichiometries, and a more nuanced insight into the differences between clusters made up of different semiconducting materials. ,,, With a tenacious approach to structural characterization, the QD community will benefit from the same insights that have allowed great progress in the field of metallic nanoclusters. Toward that end, the structures of clusters as QD intermediates have been determined for a wide variety of the most common semiconducting QD materials, such as CdSe, CdS, and InP. ,,, However, many other material systems have identified the presence of magic-sized clusters spectroscopically but still lack full structural characterization of those intermediates. ,,− …”
The discovery of magic-sized clusters as intermediates in the synthesis of colloidal quantum dots has allowed for insight into formation pathways and provided atomically precise molecular platforms for studying the structure and surface chemistry of those materials. The synthesis of monodisperse InAs quantum dots has been developed through the use of indium carboxylate and As(SiMe 3 ) 3 as precursors and documented to proceed through the formation of magic-sized intermediates. Herein, we report the synthesis, isolation, and single-crystal X-ray diffraction structure of an InAs nanocluster that is ubiquitous across reports of InAs quantum dot synthesis. The structure, In 26 As 18 (O 2 CR) 24 (PR' 3 ) 3 , differs substantially from previously reported semiconductor nanocluster structures even within the III−V family. However, it can be structurally linked to III−V and II−VI cluster structures through the anion sublattice. Further analysis using variable temperature absorbance spectroscopy and support from computation deepen our understanding of the reported structure and InAs nanomaterials as a whole.
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CONSPECTUS:In nanoscale chemistry, magic-sized clusters (MSCs) stand out for their precise atomic configurations and privileged stability, offering unprecedented insights into the atomiclevel structure of ligand-capped nanocrystals and a gateway to new synthesis and functionality. This article explores our efforts to shed light on the structure and reactivity of II−VI and III−V semiconductor MSCs. We have specifically been interested in the synthesis, isolation, and characterization of MSCs implicated as key intermediates in the synthesis of semiconductor quantum dots. Our exploration into their synthesis, structure, transformation, and reactivity provides a roadmap to expand the scope of accessible semiconductor clusters with diverse structures and properties. It paves the way for tailor-made nanomaterials with unprecedented atom-level control. In these studies, atomic level structure has been deduced through advanced characterization methods, including single-crystal and powder X-ray diffraction, complemented by pair distribution function analysis, nuclear magnetic resonance spectroscopy, and vibrational spectroscopy. We have identified two distinct families of CdSe MSCs with zincblende and wurtzite-like structures. We have also characterized two members of the wurtzite-like family of InP clusters and a related InAs cluster. Our research has revealed intriguing structural homologies between II−VI and III−V MSCs. These findings contribute to our fundamental understanding of semiconductor MSCs and hint at broader implications for phase control at the nanoscale and the synthesis of novel nanomaterials. We have also explored three distinct pathways of cluster reactivity, including cluster interconversion mediated by controlling the chemical potential of the reaction environment, both seeded and single source precursor growth mechanisms to convert MSCs into larger nanostructures, and cation exchange to access new cluster compositions that are precursors to nanocrystals that may be challenging or impossible to access from traditional bottom-up nucleation and growth. Together with the collective efforts of other researchers in the field of semiconductor cluster chemistry, our work establishes a strong foundation for predicting and controlling the form and function of semiconductor MSCs. By highlighting the role of surface chemistry, stoichiometry, and dopant incorporation in determining cluster properties, our work opens exciting possibilities for the design and synthesis of new materials. The insights gained through these efforts could significantly impact the future of nanotechnology, particularly in areas like photonics, electronics, and catalysis.
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