Ligand hyperfine interaction at the neutral silicon vacancy in 4<i>H</i>- and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">SiC</mml:mi></mml:math>

Wagner, M.; Thinh, N. Q.; Son, N. T.; Chen, Weimin; Janzén, Erik; Baranov, P. G.; Мохов, Е. Н.; Hallin, Christer; Lindström, Lennart

doi:10.1103/physrevb.66.155214

Cited by 45 publications

(15 citation statements)

References 16 publications

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“…The formation energies of V Si in N-doped 4H-SiC is higher than that of V c in the Si rich growth condition, while it is lower than that of V c in the C rich growth condition. However, Mizuochi et al [20], Wagner et al [21], Zywietz et al [22] and Deák et al [23] confirmed that V Si is an important native defect in 4H-SiC, Therefore, the models of configuration N C with V Si are considered in the following discussions, which is similar to the literature reported by Weber et al [24].…”

Section: Resultsmentioning

confidence: 72%

Vacancy induced magnetism in N-doped 4H–SiC by first-principle calculations

Lin

Tie-zheng

Zhang

et al. 2015

Solid State Sciences

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Section: Resultsmentioning

confidence: 72%

Vacancy induced magnetism in N-doped 4H–SiC by first-principle calculations

Lin

Tie-zheng

Zhang

et al. 2015

Solid State Sciences

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“…With E e 200 keV, a 864.9 nm PL signal was observed. This signal was attributed to the V1 signal previously observed in Sörman et al [18] and Wagner et al [19] , in which the V1 (865 nm), V2 (887 nm), and the V3 (908 nm) signals were unambiguously related to the V Si defects at different equivalent sites. The observation of Steeds et al [16,17] contradicts with the findings of Rempel et al [11] (i.e., V Si was only created with E e 500 keV).…”

Section: P H Y S I C a L R E V I E W L E T T E R S Week Ending 26 Marmentioning

confidence: 96%

Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2
Chen
¹
,
Yang
²
,
Gong
³

et al. 2004
Phys. Rev. Lett.
23
1
18
0
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N-type 6H-SiC samples irradiated with electrons having energies of E e 0:2, 0:3, 0:5, and 1:7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E e 0:3 MeV, deep levels ED1, E 1 =E 2 , and E i appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E 1 =E 2 , as well as ED1 and E i , involves the displacement of the C atom in the SiC lattice. DOI: 10.1103/PhysRevLett.92.125504 PACS numbers: 61.72.Ji, 61.80.Fe, 81.05.Je Silicon carbide (SiC) is a promising wide band gap material for fabricating high-temperature, highpower, and high-frequency electronic devices [1]. Deep level defects induced by ion implantation or particle irradiation have been extensively studied because of their great influence on the materials' electrical and optical properties. A general classification for ion implanted or particle irradiated n-type 6H-SiC includes levels ED1 ( E C -0:27 eV), E i ( E C -0:51 eV), E 1 =E 2 ( E C -0:34=0:44 eV, with the name of Z 1 =Z 2 for 4H-SiC), and Z 1 =Z 2 ( E C -0:58=0:72 eV, with the name of E 1 =E 2 for 4H-SiC) [2 -9]. Information involving the microstructures of these deep levels is controversial and incomplete. The E 1 =E 2 doublet is not only the most dominant but also appears to be the most thermal stable in electron irradiated n-type 6H-SiC. The microstructure responsible for this level has been attributed to [6,9], and N i -C i complex [10].All previous deep level transient spectroscopy (DLTS) studies on electron irradiated 6H-SiC materials usually involved high energy electron irradiations (>MeV). Such investigations induce defect types originating from both C and Si atoms displacement and thus provide no basis for discriminating between primary vacancy defects originating on either sublattice. Since the C atom has a significantly smaller mass than that of Si atom (Si=C 2:33), the maximum energy transferred from the electron to the C atoms in the SiC lattice during elastic collision is larger than that of the Si atom. This implies the value of the minimum electron energy for creating the defect V C , originating from displacing a C atom, would be lower than that for creating the defect V Si . This idea has been nicely demonstrated recently by Rempel et al. [11]. Using both positron lifetime and coincident Doppler broadening techniques, it was shown that for low electron irradiation energy 0:5 MeV > E e > 0:3 MeV, only V C was generated, while at higher energy (E e > 0:5 MeV), V Si could also be detected [11]. The precise values of threshold electron irradiation energies for displacement of either the C or the Si atoms are difficult to estimate since they depend to some extent on the conduction type, the growth techniques, or the relative orientation of crystallographic planes of the sample to the incident electron direction and on sample temperature. Nevertheless, the approximate values given above can provide helpful...

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“…The complete analysis of the T V 2a spectrum was achieved by using the signal enhancement due to electron-spin polarization by light illumination. 11,16 However, the central primary line of T V 2a was often missing, because it was not enhanced by illumination and was usually hidden underneath the v − Si signal. This led to the mistaken idea that T V 2a originates from v 0 Si with S = 1.…”

Section: Introductionmentioning

confidence: 99%

“…This led to the mistaken idea that T V 2a originates from v 0 Si with S = 1. 16 The carbon vacancy is also a well-known primary defect in SiC, which was essentially observed in its positive charge state (V + C , S = 1/2) by EPR in p-type 4H and 6H polytypes irradiated with electrons. The EI5 and EI6 centers, found in the 4H polytype, 5,17,18 have been established to be V + C at cubic (k) and hexagonal (h) sites, respectively.…”

Section: Introductionmentioning

confidence: 99%

Characterization of a silicon-related defect detected by its excited triplet state in electron-irradiated 3C-SiC

et al. 2011

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Using electron paramagnetic resonance (EPR) under band-gap illumination, we show experimental evidence of a defect center in n-type cubic silicon carbide (3C-SiC) single crystal irradiated with 1-MeV electrons. This defect is diamagnetic (S = 0) in its ground state and can be pumped into a paramagnetic (S = 1, M S = 0) state by above-band-gap photon excitation, where it is detected by EPR absorption and emission transitions M S = 0 ↔ M S = ± 1. This defect is characterized by g = 2.0029, a zero-field splitting D = 24.6 × 10 −4 cm −1 , and a hyperfine interaction A = 2.61 × 10 −4 cm −1 . By studying the annealing behavior of this defect localized at a silicon site, we suggest that it is associated with the neutral silicon vacancy.

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Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and6H−SiC

Cited by 45 publications

References 16 publications

Vacancy induced magnetism in N-doped 4H–SiC by first-principle calculations

Vacancy induced magnetism in N-doped 4H–SiC by first-principle calculations

Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2
Chen
¹
,
Yang
²
,
Gong
³

et al. 2004
Phys. Rev. Lett.
23
1
18
0
View full text Add to dashboard Cite

Characterization of a silicon-related defect detected by its excited triplet state in electron-irradiated 3C-SiC

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Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and6H−SiC

Cited by 45 publications

References 16 publications

Vacancy induced magnetism in N-doped 4H–SiC by first-principle calculations

Vacancy induced magnetism in N-doped 4H–SiC by first-principle calculations

Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2Chen1, Yang2, Gong3 et al. 2004Phys. Rev. Lett.231180View full textAdd to dashboardCite

Characterization of a silicon-related defect detected by its excited triplet state in electron-irradiated 3C-SiC

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Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2
Chen
¹
,
Yang
²
,
Gong
³

et al. 2004
Phys. Rev. Lett.
23
1
18
0
View full text Add to dashboard Cite