“…[97,100,101] We have quantitatively discriminated for the first time, that the major part of the observed PL strong quenching for CdSe/ZnS QD in "QD-Porphyrin" nanoassemblies can be understood in terms of the electron tunneling across the ZnS shell in the conditions of quantum confinement, and the minor part (10-15 %) of the QD PL quenching is caused by Foerster resonance energy transfer (FRET) QD→porphyrin. [90,91,[93][94][95][96][97]123] Instead, the interaction of porphyrin molecules with QD leads to the inhomogeneous surface dynamics for semiconductor QDs and the non-FRET quenching of QD PL in nanoassemblies might be related to few possible reasons: i) depletion of capping ligand TOPO molecules by the respective porphyrin molecules, ii) creation or redistribution of QD surface trap states, iii) low temperature reconstruction of capping ligand layer perturbed by attached porphyrin, etc. Correspondingly, using porphyrins (especially meso-pyridyl substituted H 2 P and CuP) attaching with QD surface, one may tune the electronic states of CdSe/ZnS QD and control luminescent properties of nanoassemblies.…”