Lifetime profile reconstruction in helium implanted silicon for planar IGBTs

Abstract

Electronic switching devices often requires some form of post processing to adjust, with high spatial resolution, the value of the recombination lifetime. The most selective killing technique used so far exploits high energy helium implantation. The main obstacle to the proper modeling of implantation effects comes from the unavailability of reliable measurement techniques able to "look" into the device to measure the local value of the lifetime. In this paper the differential technique for lifetime profile measurements is applied to materials suitable for the fabrication of planar IGBTs.

Modulating properties by light ion irradiation: From novel functional materials to semiconductor power devices

“…8, it is seen that the maximum of the reverse recovery current cuts in half accompanied with a faster and softer switch-off, even though the subsequent annealing partly compensates the irradiation contribution. In addition to reverse recovery waveforms, the open circuit voltage decay (OCVD) is also employed to evaluate the high-level lifetime (τ HL ) that is calculated from the slope of dV/dt response, which manipulates the time dependent term of the post injection voltage [65] . As shown in Fig.…”