Lifetime of the phonons in the PLT ceramic

Barba-Ortega, J.; Londoño, F. A.; Joya, M. R.

doi:10.1063/1.4901649

Cited by 4 publications

(4 citation statements)

References 5 publications

(8 reference statements)

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“…From the analysis of line broadening, it is clear that the distortions in the octahedra become prominent, involving larger vibrational amplitudes with increase in temperature. Qualitative information about the phonon lifetime can be extracted from the FWHM values of Raman modes as Raman peak width is inversely related to the phonon lifetimes, where c is the speed of light . It is evident from the Figure g–i that the phonon lifetimes decrease with increase in temperature due to decrease in the phonon mean free path. , The Raman modes are intense and clearly discernible even at high temperatures, which further strengthen the fact that the B′ and B″ site cations are very well ordered without any intermixing.…”

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confidence: 68%

“…Qualitative information about the phonon lifetime can be extracted from the FWHM values of Raman modes as Raman peak width is inversely related to the phonon lifetimes, where c is the speed of light . It is evident from the Figure g–i that the phonon lifetimes decrease with increase in temperature due to decrease in the phonon mean free path. , The Raman modes are intense and clearly discernible even at high temperatures, which further strengthen the fact that the B′ and B″ site cations are very well ordered without any intermixing. The randomly occupied atoms at B′ and B″ sites would lead to an average Pm 3̅ m space group which does not show any Raman-active modes .…”

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confidence: 68%

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Sublattice Distortion Enabled Strong Interplay between Phonon Vibrations, Electron–Phonon Coupling, and Self-Trapped Excitonic Emissions in Cs₂Ag_1–xNa_xBiCl₆ Double Perovskites

Dakshinamurthy

Sudakar

2022

J. Phys. Chem. Lett.

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Sublattice distortion resulting from alloying compositionally distinct double perovskites is shown to influence photoluminescence emission in Cs 2 Ag 1−x Na x BiCl 6 (0 < x < 1). The end members show negligible photoluminescence, whereas interestingly the alloys exhibit broad photoluminescence. These emissions are attributed to self-trapped excitons (STE) resulting from sublattice distortions arising due to the mismatch in [AgCl 6 ] 5− and [BiCl 6 ] 3− octahedra. Change in sublattice distortions plays significant role in the formation and recombination of STEs. The STE emission intensity and quantum yield greatly depend on x, with highest intensity observed for x = 0.75, consistent with a large change in sublattice found at this x. Variation in photoluminescence properties with composition follows a similar trend as that of bandgap and phonon vibrational changes observed due to sublattice distortion. Temperature-dependent phonon vibrations and photoluminescence studies reveal a giant electron−phonon coupling. A strong synergy between STE emissions, electron−phonon coupling, bandgap, and phonon vibrations in double perovskites with sublattice distortions is demonstrated.

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confidence: 68%

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confidence: 68%

Sublattice Distortion Enabled Strong Interplay between Phonon Vibrations, Electron–Phonon Coupling, and Self-Trapped Excitonic Emissions in Cs₂Ag_1–xNa_xBiCl₆ Double Perovskites

Dakshinamurthy

Sudakar

2022

J. Phys. Chem. Lett.

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“…This factor describes the phonon-free path or lifetime. At room temperature the main mechanism responsible for phonon scattering involves structural defects introducing anharmonic effects [ 21 , 22 ]. If anharmonic terms are taken into account in the lattice Hamiltonian, the phonons are no longer eigenstates of the system, and they become finite-lived quasiparticles described by a complex self-energy, which in turn determines the line shape of the associated Raman peak [ 23 , 24 ].…”

Section: Resultsmentioning

confidence: 99%

The n–Si/p–CVD Diamond Heterojunction

et al. 2020

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Due to the possible applications, materials with a wide energy gap are becoming objects of interest for researchers and engineers. In this context, the polycrystalline diamond layers grown by CVD methods on silicon substrates seem to be a promising material for engineering sensing devices. The proper tuning of the deposition parameters allows us to develop the diamond layers with varying crystallinity and defect structure, as was shown by SEM and Raman spectroscopy investigations. The cathodoluminescence (CL) spectroscopy revealed defects located just in the middle of the energy gap of diamonds. The current–voltage–temperature, I−V−T characteristics performed in a broad temperature range of 77–500 K yielded useful information about the electrical conduction in this interesting material. The recorded I−V−T in the forward configuration of the n–Si/p–CVD diamond heterojunction indicated hopping trough defects as the primary mechanism limiting conduction properties. The Ohmic character of the carriers flux permitting throughout heterojunction is intensified by charges released from the depletion layer. The magnification amplitude depends on both the defect density and the probability that biasing voltage is higher than the potential barrier binding the charge. In the present work, a simple model is proposed that describes I−V−T characteristics in a wide range of voltage, even where the current saturation effect occurs.

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“…5(d), an increase in the relaxation time of the central peak near T c is an indicative of slowing down of the lattice dynamics which implies the presence of additional relaxation mechanism involving dynamical lattice defects, phonon density, and possible domain wall motion during the transition (refer to the ESI † for more details). 53,55…”

Section: Signatures Of the Central Peak And Strong Anharmonicitymentioning

confidence: 99%

Lattice dynamics across the ferroelastic phase transition in Ba₂ZnTeO₆: a Raman and first-principles study

Badola

Mukherjee

Ghosh

et al. 2022

Phys. Chem. Chem. Phys.

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Lifetime of the phonons in the PLT ceramic

Cited by 4 publications

References 5 publications

Sublattice Distortion Enabled Strong Interplay between Phonon Vibrations, Electron–Phonon Coupling, and Self-Trapped Excitonic Emissions in Cs₂Ag_1–xNa_xBiCl₆ Double Perovskites

Sublattice Distortion Enabled Strong Interplay between Phonon Vibrations, Electron–Phonon Coupling, and Self-Trapped Excitonic Emissions in Cs₂Ag_1–xNa_xBiCl₆ Double Perovskites

The n–Si/p–CVD Diamond Heterojunction

Lattice dynamics across the ferroelastic phase transition in Ba₂ZnTeO₆: a Raman and first-principles study

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Lifetime of the phonons in the PLT ceramic

Cited by 4 publications

References 5 publications

Sublattice Distortion Enabled Strong Interplay between Phonon Vibrations, Electron–Phonon Coupling, and Self-Trapped Excitonic Emissions in Cs2Ag1–xNaxBiCl6 Double Perovskites

Sublattice Distortion Enabled Strong Interplay between Phonon Vibrations, Electron–Phonon Coupling, and Self-Trapped Excitonic Emissions in Cs2Ag1–xNaxBiCl6 Double Perovskites

The n–Si/p–CVD Diamond Heterojunction

Lattice dynamics across the ferroelastic phase transition in Ba2ZnTeO6: a Raman and first-principles study

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Sublattice Distortion Enabled Strong Interplay between Phonon Vibrations, Electron–Phonon Coupling, and Self-Trapped Excitonic Emissions in Cs₂Ag_1–xNa_xBiCl₆ Double Perovskites

Sublattice Distortion Enabled Strong Interplay between Phonon Vibrations, Electron–Phonon Coupling, and Self-Trapped Excitonic Emissions in Cs₂Ag_1–xNa_xBiCl₆ Double Perovskites

Lattice dynamics across the ferroelastic phase transition in Ba₂ZnTeO₆: a Raman and first-principles study