Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method
Abstract:Thermal management has become more critical as semiconductor devices are miniaturized. In metal–oxide–semiconductor field-effect transistors, the problem is the reduction in electron mobility in the channel layer owing to the temperature rise caused by heat generation near the channel-drain region. Focusing on the mean free paths of phonons and electrons in Si, nanostructures of a few 10 nm may only hinder heat propagation without affecting electron transportation. Therefore, inserting nanostructures into the … Show more
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