Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials

Huh, Sungmin; Kim, Hoon; Yoon, Gilwon; Choi, Jinsung; Lee, Han-Shin; Lee, Dong Gun; Ahn, Byung-Sup; Seo, Hwan-Seok; Kim, Dong-Wan; Kim, Seoung Sue; Cho, Han Ku; Watanabe, Takeo; Kinoshita, Hiroo

doi:10.1117/12.772412

Cited by 13 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…EUV masks are exposed in vacuum; carbon contamination inside exposure tools has been an issue in EUV patterned mask defectivity (11). Oxidizing chemistries are commonly used to remove organics; however, such chemistries will oxidize the Ru capping layer, which will result in reflectivity loss over multiple cleaning cycles, as shown in Figure 6.…”

Section: Challenges Of the Ru Capped Euv Patterned Mask Cleaningmentioning

confidence: 99%

Cleaning Challenges of EUV Mask Substrates, Blanks, and Patterned Mask

Rastegar¹,

House²,

Kadaksham³

2011

ECS Trans.

View full text Add to dashboard Cite

SEMATECH has been a pioneer in EUV mask substrate and blank cleaning since early 2003. Nevertheless, EUV mask blank defectivity remains one of the main challenges in realizing EUV lithography. EUV masks have their own cleaning challenges that are partly related to introducing new materials and partly related to cleaning-induced EUV reflectivity changes in the multilayer structure. Removal of sub-20 nm particles from the surface of EUV mask substrates without leaving pits is a major challenge along with maintaining Ru cap durability over multiple cleanings and removing sub-20 nm particles from the inside of contact holes and trenches. The goal of this paper is to introduce challenging problems in EUV mask cleaning to researchers and technologists whose research can accelerate the mitigation of EUV mask defects.

show abstract

Section: Challenges Of the Ru Capped Euv Patterned Mask Cleaningmentioning

confidence: 99%

Cleaning Challenges of EUV Mask Substrates, Blanks, and Patterned Mask

Rastegar¹,

House²,

Kadaksham³

2011

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…However, the reflectance was reduced by the repetition of EUV irradiation because of oxidation around the mask surface and/or carbon deposition on the mask surface. The carbon contamination itself just reduces throughput due to the degradation of reflectivity on the multilayer areas and diminishes the controllability of the critical dimension (CD) 4 .…”

Section: Introductionmentioning

confidence: 99%

The source of carbon contamination for EUV mask production

Kim¹,

Lee²,

Choi³

et al. 2008

SPIE Proceedings

View full text Add to dashboard Cite

As the semiconductor industry requires lithography suitable for 32-nm node, extreme ultraviolet lithography (EUVL) has the potential to provide this capability for the mass fabrication of semiconductor devices. But because an extreme ultraviolet (EUV) lithography exposure system is operated in vacuum, during irradiation by EUV light, hydrocarbons are decomposed in vacuum 1-3 , for example, by the outgassing from EUV mask, and contaminate the surface of imaging optics which is coated with Mo/Si multilayers with carbon. Thus, this contamination not only reduces the reflectivity of the Mo/Si multi-layers of imaging optics and degrades the exposure uniformity, but also degrades the resolution of the imaging optics. In this study, as we examined the volume of the out-gassing and the species from EUV mask after every process for EUV mask production, we will control the carbon contamination of EUV mask.

show abstract

“…EUV masks need to be durable under multiple cleaning processes. 6 The capping layer on top of the MoSi multilayers of the blank is the most critical layer in this case. It has two functions.…”

Section: Continued On Next Pagementioning

confidence: 99%

Overcoming mask blank defects in EUV lithography

Rastegar¹

2009

SPIE Newsroom

View full text Add to dashboard Cite

Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials

Cited by 13 publications

References 0 publications

Cleaning Challenges of EUV Mask Substrates, Blanks, and Patterned Mask

Cleaning Challenges of EUV Mask Substrates, Blanks, and Patterned Mask

The source of carbon contamination for EUV mask production

Overcoming mask blank defects in EUV lithography

Contact Info

Product

Resources

About