Abstract:An electro-thermal compact model of MOSFET which takes the hot carriers effects into account is presented in this paper. This new compact model evaluates the threshold voltage shift as well as the mobility reduction induced by the increase of the density of states at the Si/SiO 2 interface produced by hot carriers. This physical effect depends on the biasing conditions and the temperature of the device. Results obtained on a single transistor are presented and compared to experimental results. Electro-thermal … Show more
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