Lifetime-limiting defects in n− 4H-SiC epilayers

Klein, P. B.; Shanabrook, B. V.; Huh, Sungmin; Polyakov, A. Y.; Skowroński, Marek; Sumakeris, Joseph J.; O’Loughlin, Michael J.

doi:10.1063/1.2170144

Cited by 191 publications

(107 citation statements)

References 12 publications

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“…This measured carrier lifetime in as-grown 3C-SiC is much higher than the reported values in 3C-SiC grown by other methods, [19][20][21] even a little bit higher than the typical values in as-grown 4H-SiC. [11][12][13][14][15] The maximum carrier lifetime reported in asgrown 4H-SiC is 8.6 ls, 11 which was measured by l-PCD in a high-quality 50 lm thick CVD epilayer under an injection of 5 Â 10 12 cm À2 . The measured conditions are quite similar to our measurements.…”

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confidence: 39%

“…[11][12][13][14][15][16] The main lifetime-limiting defects are recognized as Z 1/2 and EH 6/7 centers, which are related to intrinsic defects with energy levels located at 0.65 eV and 1.55 eV below the conduction band, respectively. [11][12][13][14] Recently, it was shown that the reduction of the defects of Z 1/2 and EH 6/7 by post-growth processes results in an improvement of carrier lifetime. Kimoto et al 15 reported that the carrier lifetime in a 148-lm-thick 4H-SiC layer is enhanced from 0.69 to 9.5 ls after thermal treatment.…”

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confidence: 99%

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Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Sun

Ivanov

Liljedahl

et al. 2012

Applied Physics Letters

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As a challenge and consequence due to its metastable nature, cubic silicon carbide (3C-SiC) has only shown inferior material quality compared with the established hexagonal polytypes. We report on growth of 3C-SiC(111) having a state of the art semiconductor quality in the SiC polytype family. The x-ray diffraction and low temperature photoluminescence measurements show that the cubic structure can indeed reach a very high crystal quality. As an ultimate device property, this material demonstrates a measured carrier lifetime of 8.2 mu s which is comparable with the best carrier lifetime in 4 H-SiC layers. In a 760-mu m thick layer, we show that the interface recombination can be neglected since almost all excess carriers recombines before reaching the interface while the surface recombination significantly reduces the carrier lifetime. In fact, a comparison of experimental lifetimes with numerical simulations indicates that the real bulk lifetime in such high quality 3C-SiC is in the range of 10-15 mu s

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confidence: 39%

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confidence: 99%

Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Sun

Ivanov

Liljedahl

et al. 2012

Applied Physics Letters

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“…However, with decreasing epi-layer thickness, the effective lifetime becomes limited by thickness and surface recombination, thereby losing sensitivity to epi-layer defects. 17 In the QUAD method, the surface depletion region is active in probing the defects; therefore QUAD is effective also in thin epi-layers. Such distinctly different behavior is illustrated in Fig.…”

Section: Resultsmentioning

confidence: 99%

Review—Recent Advancement in Charge- and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT

Wilson¹,

Findlay²,

Savtchouk³

et al. 2017

ECS J. Solid State Sci. Technol.

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The charge-based corona-Kelvin non-contact metrology, originally developed for Si IC fabrication, has recently been extended to wide energy gap semiconductors. We discuss principles of this extension and key applications, namely: high precision dopant measurement on SiC and GaN; two-dimensional electron gas characterization in AlGaN/GaN HEMT structures; interface and dielectric characterization on epi-layers with SiO 2 and SiN; comprehensive interfacial instability characterization of oxidized SiC; and whole wafer mapping of defects with a charge-assisted surface voltage technique, QUAD. This powerful set of measurements is performed without fabrication of any test structures or electrical contact. Corresponding commercial tools are currently being introduced. Based on the historical example of silicon IC, we believe that this approach shall offer enhanced testing for research and for manufacturing process control with reduced cost and fast data feedback benefiting wide-bandgap device technology. . This paper is part of the JSS Focus Issue on GaN-Based Electronics for Power, RF, and Rad-Hard Applications.Development of semiconductor devices and control of the manufacturing process requires cost effective metrology with rapid feedback to pilot or manufacturing lines. In this respect, silicon IC's have been benefiting from inventions (by IBM, Fishkill, NY 1 and by SDI, Tampa, FL 2 ) that created a foundation for the unique charge-based non-contact electrical metrology. 3In this technique, an electrical biasing is produced by corona charging of a surface and the response is monitored by measuring the surface voltage with a vibrating probe, such as a Kelvin-probe. The technique is commonly referred to as the corona-Kelvin method. 4 Corresponding commercial tools designed for Si wafers reduced the need for fabrication of electrical test devices and electric contacts; lowering the manufacturing cost and shortening the data feedback time from weeks to less than one hour. 5 The metrology has been continuously improved in sensitivity, precision, repeatability, and spatial resolution; meeting the demands of new technology nodes. It has been used by all major silicon IC manufacturing companies and has also been adopted by smaller silicon device fablines looking for cost effective metrology solutions.Very recent developments in corona-Kelvin, discussed in this work, are intended for rapidly advancing wide-bandgap semiconductor technology that includes SiC, GaN, and AlGaN/GaN heterostructures.

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“…[1][2][3] These properties make SiC a suitable semiconductor for fabrication of devices that can operate at high power, high frequency and high temperatures. 2,3 Additionally, SiC is also a radiation hard material and this makes it a suitable semiconductor for devices that can operate both in high radiation environments and at high temperatures.…”

Section: Introductionmentioning

confidence: 99%