Li‐Ion‐Based Electrolyte‐Gated Transistors with Short Write‐Read Delay for Neuromorphic Computing

Abstract

The hardware implementation of artificial neural networks requires synaptic devices with linear and high‐speed weight modulation. Memristors as a candidate suffer from excessive write variation and asymmetric resistance modulation that inherently rooted in their stochastic mechanisms. Thanks to a controllable ion intercalation/deintercalation mechanism, electrolyte‐gated transistors (EGTs) hold prominent switching linearity and low write variation, and thus have been the promising alternative for synaptic devices. However, the operation frequency of EGTs is seriously limited by the time that is required for the state stabilization, that is, the write‐read delay after each set/reset operation. Here, a Li‐ion‐based EGT (Li‐EGT) with write‐read delay of 3 ms along with multistates, low energy consumption, and quasi‐linear weight update is introduced. The origin of the short write‐read delay of the device is attributed to the permeable interface between electrolyte and gate electrode. Leveraging the Li‐EGT characteristic, near‐ideal accuracy (≈94%) on handwritten digital image data set has been achieved by the corresponding neural network simulation. These results provide an insight into the development of Li‐EGTs for high‐speed neuromorphic computing.

Neuromorphic Artificial Vision Systems Based on Reconfigurable Ion‐Modulated Memtransistors

“…As a strongly correlated transition metal oxide, NbO x has an intrinsic low conductance level and sensitivity to ion doping, allowing the system to be easily modulated under ion doping with lower power consumption. [34][35][36][37] Figure 2b shows the top view of the device under an optical microscope, and the crosssectional transmission electron microscope (TEM) images can be seen in Figure 2c. The detailed process of device fabrication is presented in Experimental Section.…”

Neuromorphic Artificial Vision Systems Based on Reconfigurable Ion-modulated Memtransistors

“…As a strongly correlated transition metal oxide, NbO x has an intrinsic low conductance level and sensitivity to ion doping, allowing the system to be easily modulated under ion doping with lower power consumption. [33][34][35][36] Figure 2b shows the top view of the device under an optical microscope and the cross-sectional transmission electron microscope (TEM) images can be seen in Figure 2c. The detailed process of device fabrication is presented in the Experimental Section.…”

All-Solid-State Synaptic Transistors with Lithium-Ion-Based Electrolytes for Linear Weight Mapping and Update in Neuromorphic Computing Systems

“…Liquid-electrolyte-based LISTA devices with high ionic conductivities demonstrated synaptic functionalities. However, liquid electrolytes cannot easily be used for fabricating highly integrated devices, and they cause stability issues. ,, Although solid electrolytes can overcome these limitations, their low ionic conductivities may degrade their synaptic properties. ,, A solid electrolyte with a high ionic conductivity would enable the smooth movement of Li ions, thereby preventing saturation at the channel/electrolyte interface and enabling linear weight update characteristics. Therefore, further research is required on all-solid-state synaptic devices that incorporate solid electrolytes with high ionic conductivities for application in high-end neuromorphic hardware.…”