Abstract:The dipole-dipole interaction model is employed to investigate the angular dependence of the levitation and lateral forces acting on a small magnet in an anti-symmetric magnet/superconducting sphere system. Breaking the symmetry of the system enables us to study the lateral force which is important in the stability of the magnet above a superconducting sphere in the Meissner state. Under the assumption that the lateral displacement of the magnet is small compared to the physical dimensions of our proposed syst… Show more
“…The studied compounds have shown strong p-d exchange interaction within the valence band of ZnTe to induce a p-type carrier induced ferromagnetism. The large exchange splitting occurs from Mn to Ni, which is due to the increasing number of d-electrons (Mn-3d 5 , Fe-3d 6 , Co-3d 7 , Ni-3d 8 ). Furthermore, the tetrahedral environment formed by the Te anions produce a crystal field that is responsible for splitting 3d-states of the T Ms into two states of e g (d z 2 , d x 2 −y 2 ) and three states of t 2g (d xy , d yz , d zx ).…”
Section: Electronic and Magnetic Behaviormentioning
confidence: 99%
“…3-II). The five 3d 5 + states further divided into two e + and three t + energy states. Similarly, 3d 0 − states also split into two e − and three t − energy states (see Fig.…”
Section: Electronic and Magnetic Behaviormentioning
confidence: 99%
“…A wide range of theoretical and experimental reports, available in the literature, depict huge motivations to explore interesting materials for versatile device functionalities. [1][2][3][4][5][6][7][8][9][10] The semiconductors belonging to II-VI, III-VI, IV-VI, are extensively being explored for various applications. Particularly, the II-VI based DMSs, for example ZnS, ZnSe, and ZnTe, are considered to be attractive owing to their wide direct band gaps, which can offer versatile opto-electronic characteristics, therefore, could be expected to replace the existing siliconbased devices.…”
We present structural, magnetic and optical characteristics of Zn 1−x T M x Te (T M = Mn, Fe, Co, Ni and x = 6.25%), calculated through Wien2k code, by using full potential linearized augmented plane wave (FP-LAPW) technique. The optimization of the crystal structures have been done to compare the ferromagnetic (FM) and antiferromagnetic (AFM) ground state energies, to elucidate the ferromagnetic phase stability, which further has been verified through the formation and cohesive energies. Moreover, the estimated Curie temperatures T c have demonstrated above room temperature ferromagnetism (RTFM) in Zn 1−x T M x Te (T M = Mn, Fe, Co, Ni and x = 6.25%). The calculated electronic properties have depicted that Mn-and Co-doped ZnTe behave as ferromagnetic semiconductors, while half-metallic ferromagnetic behaviors are observed in Fe-and Ni-doped ZnTe. The presence of ferromagnetism is also demonstrated to be due to both the p-d and s-d hybridizations between the host lattice cations and T M impurities. The calculated band gaps and static real dielectric constants have been observed to vary according to Penn's model. The evaluated band gaps lie in near visible and ultraviolet regions, which make these materials suitable for various important device applications in optoelectronic and spintronic.
“…The studied compounds have shown strong p-d exchange interaction within the valence band of ZnTe to induce a p-type carrier induced ferromagnetism. The large exchange splitting occurs from Mn to Ni, which is due to the increasing number of d-electrons (Mn-3d 5 , Fe-3d 6 , Co-3d 7 , Ni-3d 8 ). Furthermore, the tetrahedral environment formed by the Te anions produce a crystal field that is responsible for splitting 3d-states of the T Ms into two states of e g (d z 2 , d x 2 −y 2 ) and three states of t 2g (d xy , d yz , d zx ).…”
Section: Electronic and Magnetic Behaviormentioning
confidence: 99%
“…3-II). The five 3d 5 + states further divided into two e + and three t + energy states. Similarly, 3d 0 − states also split into two e − and three t − energy states (see Fig.…”
Section: Electronic and Magnetic Behaviormentioning
confidence: 99%
“…A wide range of theoretical and experimental reports, available in the literature, depict huge motivations to explore interesting materials for versatile device functionalities. [1][2][3][4][5][6][7][8][9][10] The semiconductors belonging to II-VI, III-VI, IV-VI, are extensively being explored for various applications. Particularly, the II-VI based DMSs, for example ZnS, ZnSe, and ZnTe, are considered to be attractive owing to their wide direct band gaps, which can offer versatile opto-electronic characteristics, therefore, could be expected to replace the existing siliconbased devices.…”
We present structural, magnetic and optical characteristics of Zn 1−x T M x Te (T M = Mn, Fe, Co, Ni and x = 6.25%), calculated through Wien2k code, by using full potential linearized augmented plane wave (FP-LAPW) technique. The optimization of the crystal structures have been done to compare the ferromagnetic (FM) and antiferromagnetic (AFM) ground state energies, to elucidate the ferromagnetic phase stability, which further has been verified through the formation and cohesive energies. Moreover, the estimated Curie temperatures T c have demonstrated above room temperature ferromagnetism (RTFM) in Zn 1−x T M x Te (T M = Mn, Fe, Co, Ni and x = 6.25%). The calculated electronic properties have depicted that Mn-and Co-doped ZnTe behave as ferromagnetic semiconductors, while half-metallic ferromagnetic behaviors are observed in Fe-and Ni-doped ZnTe. The presence of ferromagnetism is also demonstrated to be due to both the p-d and s-d hybridizations between the host lattice cations and T M impurities. The calculated band gaps and static real dielectric constants have been observed to vary according to Penn's model. The evaluated band gaps lie in near visible and ultraviolet regions, which make these materials suitable for various important device applications in optoelectronic and spintronic.
“…Analytical solutions are generally only available for simple symmetric geometries, such as planes, spheres and cylinders. Those cases have been widely studied, mostly for calculating the interaction and levitation forces [14][15][16][17][18][19][20][21][22][23][24][25]. Moreover, numerical solutions are usually either for bulk samples [26] or simple geometries [27][28][29], and are generally very time and/or resource intensive.…”
Quantum computation and simulation requires strong coherent coupling between qubits, which may be spatially separated. Achieving this coupling for solid-state based spin qubits is a longstanding challenge. Here we theoretically investigate a method for achieving such coupling, based on superconducting nano-structures designed to channel the magnetic flux created by the qubits. We detail semi-classical analytical calculations and simulations of the magnetic field created by a magnetic dipole, depicting the spin qubit, positioned directly below nanofabricated apertures in a superconducting layer. We show that such structures could channel the magnetic flux, enhancing the dipole-dipole interaction between spin qubits and changing its scaling with distance, thus potentially paving the way for controllably engineering an interacting spin system.
“…Maglev is used for magnetic applications, transportation and product display purposes. The problem of an elevated magnet above a superconducting material has been investigated by many researchers [1,2,3] . The case of a small magnet elevated above a semi-infinite superconducting material has no discrepancy in literature regardless of the method used to estimate the interaction or the elevated force between the magnet and the semi-infinite superconducting material.…”
The interaction force between a small magnet and a superconducting sphere is calculated
using the method of images. Our approach can be easily verified by applying boundary
conditions. This work will possesses and clear the discrepancies found in the literature. For
collinear dipoles case (small magnet and its image), we found the elevated force to be dependent
on the geometrical dimensions of the problem
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