Level set modeling of the orientation dependence of solid phase epitaxial regrowth

Abstract

Articles you may be interested inModeling two-dimensional solid-phase epitaxial regrowth using level set methods Level set methods have previously been successfully implemented in interface propagation for etching and deposition processes. In this article, the authors show that level set methods can be used to model solid phase epitaxial regrowth. The model incorporates orientation dependence of regrowth as found by Csepregi et al. ͓J. Appl. Phys. 49, 3906 ͑1978͔͒. The orientation dependent velocity data are taken from Csepregi's paper and fitted to a polynomial function to give the growth velocity for level set methods. Simulations show the capability of our model in predicting the pinching of the corners in ͗111͘ direction and humplike shape in ͗100͘ direction. This is confirmed by the transmission electron microscope pictures from recent papers. This modeling holds special interest because of the different diffusivities of boron in amorphous and crystalline silicon ͑approximately five orders of magnitude difference͒ and because of the various defects forming at the pinching corners which could lead to higher leakage current in scaled devices. The level set model is implemented in FLOOPS.

Atomistic modeling of epitaxial growth of semiconductor materials

“…These pockets remain after complete regrowth has been achieved. Obtained results are in noticeable agreement with the experimentally observed evolution of similar topologies observed in [33,34]. The extended defects predicted by LKMC are also validated by the results of the cross-sectional transmission microscopy observations reported by Saenger et al [35].…”

Dopant-stress synergy in Si solid-phase epitaxy

“…[13][14][15] In particular, synergy would be important to consider in any SPEG simulations. 22 Of course, there are several challenges in this work. Accurately characterizing as a function of C B with a variable dopant profile is difficult, especially due to the ex situ nature of the experiments.…”

Level Set Modeling of Nickel Silicide Growth

“…Level Set Methods (LSM) is a mathematical technique to track any kind of dynamically evolving interface in 2D or 3D [2,3]. These techniques embed the initial position of the front into a higher dimensional function φ know as zero level set.…”

“…Nickel silicide formation kinetics follows a parabolic law implying it is a diffusion-controlled growth [5,7] where nickel diffuses through Ni 2 Si to react with Si. The orientation of substrate is known to have an influence on the kinetics of growth that can be taken care by introducing an orientation factor into the growth velocity function as shown by Morarka et al [3]. Phase transformation of Ni 2 Si to NiSi is a reaction-rate limiting mechanism [7].…”