“…An accurate description of nonequilibrium dynamics related to hot carries and excited states requires treatment of coupling between electronic and nuclear degrees of freedom and goes beyond the Born–Oppenheimer approximation. , Prevalent methods (e.g., mean-field Ehrenfest, surface hopping, , and Redfield , ) are typically used to simulate such dynamics relying on nonadiabatic couplings. Such modeling incorporating nonadiabatic effects provides mechanistical pictures of photoexcited dynamics and nonradiative relaxation for molecular systems. − A broad variety of previous studies addressed excited state properties and dynamics of various silicon systems, such as photochemistry of silane molecules using surface hopping methods, surface photovoltage of Si thin films by density matrix treatment, , multiple exciton generation in silicon–carbon nanotube quantum heterostructures through applying Boltzmann transport equation, charge carrier relaxation for Si quantum dots, , nanowires, and Si/Au nanointerfaces , adopting Redfield formalism, and nonradiative recombination in Si nanocrystals through the characterization of conical intersections. , …”