Less contribution of nonradiative recombination in ZnO nails compared with rods

Size-controllable synthesis and photocatalytic performance of ZnO hollow spheres

“…a UV emission centered at 380 nm and a deep level emission (DLE) band at 450-600 nm. The UV emission band is ascribed to a near band edge transition of ZnO, which is originated from the recombination of free excitons through an exciton-exciton collision process [41]. The white emission is related to native defects in the ZnO crystal, such as vacancies and interstitials of zinc and oxygen [42,43].…”

The growth of ZnO on stainless steel foils by MOCVD and its application in light emitting devices

“…This is because the minor carrier injection level under EL conditions is much lower than that under the PL conditions. Interestingly, for ZnO, although the radiative life time of defect related emissions is usually longer than that of FX emission, 27,28 the hole capture time of some defect centers, such as V ZnO , can be very much shorter than the life time of FX recombination. 27 As a result, when holes are injected whatever the mechanism, they will be quickly captured by such defect centers instead of directly recombining with electrons at the conduction band.…”

Fabrication of ZnO nanorods/Fe3O4 quantum dots nanocomposites and their solar light photocatalytic performance

“…80-0074). It is noticeable that the (002) diffraction peak is stronger and narrower than the other peaks, suggesting a preferential growth direction along the c-axis [19]. Figure 1b displays the XRD pattern of Fe 3 O 4 QDs.…”