Lens-integrated THz imaging arrays in 65nm CMOS technologies

Sherry, Hani; Hadi, Richard Al; Grzyb, Janusz; Öjefors, Erik; Cathelin, Andreia; Pfeiffer, Ullrich R.

doi:10.1109/rfic.2011.5940670

Cited by 55 publications

(31 citation statements)

References 5 publications

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“…5 In this context, field effect transistors (FETs) have shown their potential as sensitive THz detectors realized with various traditional semiconductor materials. [6][7][8][9][10] In an effort to close the so-called terahertz gap (loosely defined as 0.3-10 THz) a focus is on high-mobility materials, and due to its high room-temperature mobility (up to 10,000 cm 2 /Vs on SiO2) and high carrier saturation velocity, 11,12 graphene has recently attracted interest as a potential material for high-frequency applications. 13,14 Theoretical analysis of graphene confirms its potential for use as a THz FET detector.…”

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confidence: 99%

Antenna-Integrated 0.6 THz FET Direct Detectors Based on CVD Graphene

et al. 2014

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We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split-bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of roomtemperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz 0.5 . Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies.

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confidence: 99%

Antenna-Integrated 0.6 THz FET Direct Detectors Based on CVD Graphene

et al. 2014

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“…A complete analytical expression valid in all regions of operation of the FET including sub-threshold, linear and saturation as well as the loading effect has been proposed in references [25,26]. Several detector designs for imaging applications employing on-chip antennas coupled to single ended and differential plasma-wave FET have been reported in Silicon and III-V technologies [11][12][13][14][15][16][17][18][19]. Low frequency on-chip amplification following the detector has been added to improve the overall responsivity [14,15,17].…”

Section: Fet Based Thz Detectionmentioning

confidence: 99%

“…Bow-tie [13], dipole [14,16,18] and ring antennas [30] have been recently used for wide bandwidth THz detection. While having the wideband advantage, such structures couple a significant percentage of the radiation to the substrate and not to the FET detector terminals.…”

Section: On-chip Enhanced Bandwidth Patch Antennamentioning

confidence: 99%

“…In the published direct detection/incoherent systems, plasma wave field effect transistors (FETs) have been demonstrated as fast THz power detectors [11][12][13][14][15][16][17][18][19][20][21]. One important advantage of FET based THz detectors is that they are compatible with standard semiconductor integrated circuit (IC) technology and therefore can be used in the design and manufacturing of not only the detectors, but the whole receiver system in which the detector is followed by amplifiers and read-out circuitry [14,15,17].…”

Section: Introductionmentioning

confidence: 99%

“…The first circuits containing plasma wave detectors with amplifiers were manufactured mainly for imaging applications [14][15][16]. One has to stress that the requirements of THz wireless communications on the THz receiver circuitry are very different from those for imaging applications.…”

Section: Introductionmentioning

confidence: 99%

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Wide modulation bandwidth terahertz detection in 130 nm CMOS technology

Nahar

Shafee

Blin

et al. 2016

Eur. Phys. J. Appl. Phys.

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Abstract. Design, manufacturing and measurements results for silicon plasma wave transistors based wireless communication wideband receivers operating at 300 GHz carrier frequency are presented. We show the possibility of Si-CMOS based integrated circuits, in which by: (i) specific physics based plasma wave transistor design allowing impedance matching to the antenna and the amplifier, (ii) engineering the shape of the patch antenna through a stacked resonator approach and (iii) applying bandwidth enhancement strategies to the design of integrated broadband amplifier, we achieve an integrated circuit of the 300 GHz carrier frequency receiver for wireless wideband operation up to/over 10 GHz. This is, to the best of our knowledge, the first demonstration of low cost 130 nm Si-CMOS technology, plasma wave transistors based fast/wideband integrated receiver operating at 300 GHz atmospheric window. These results pave the way towards future large scale (cost effective) silicon technology based terahertz wireless communication receivers.

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Enhancement of terahertz photoconductive antenna operation by optical nanoantennas

Lepeshov

Gorodetsky

Krasnok

et al. 2016

Laser & Photonics Reviews

142

121

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Photoconductive antennas are promising sources of terahertz radiation that is widely used for spectroscopy, characterization, and imaging of biological objects, deep space studies, scanning of surfaces, and detection of potentially hazardous substances. These antennas are compact and allow for generation of both ultrabroadband pulses and tunable continuous wave terahertz signals at room temperatures, with no need for high‐power optical sources. However, such antennas have relatively low energy conversion efficiency of femtosecond laser pulses or two close pump wavelengths (photomixers) into the pulsed and continuous terahertz radiation, correspondingly. Recently, an approach to solving this problem that involves known methods of nanophotonics applied to terahertz photoconductive antennas and photomixers has been proposed. This approach comprises the use of optical nanoantennas for enhancing the absorption of pump laser radiation in the antenna gap, reducing the lifetime of photoexcited carriers, and improving the antenna thermal efficiency. This Review is intended to systematize the main results obtained by researchers in this promising field of hybrid optical‐to‐terahertz photoconductive antennas and photomixers. We summarize the main results on hybrid THz antennas, compare the approaches to their implementation, and offer further perspectives of their development including an application of all‐dielectric nanoantennas instead of plasmonic ones.

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Lens-integrated THz imaging arrays in 65nm CMOS technologies

Cited by 55 publications

References 5 publications

Antenna-Integrated 0.6 THz FET Direct Detectors Based on CVD Graphene

Antenna-Integrated 0.6 THz FET Direct Detectors Based on CVD Graphene

Wide modulation bandwidth terahertz detection in 130 nm CMOS technology

Enhancement of terahertz photoconductive antenna operation by optical nanoantennas

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