Lecture Notes on Principles of Plasma Processing

Chen, Francis F.; Chang, Jane P.

doi:10.1007/978-1-4615-0181-7

Cited by 180 publications

(174 citation statements)

References 2 publications

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“…Similarly to a q and a r , a || is computed as the HWHM of the fluctuation profile along the field line, n r s t n r s t , , , , [36]. As shown in figure 5, where the joint probability of the pre-sheath density drop at the two limiter plates is displayed, the blobs disconnect from the bottom limiter plate for high resistivity …”

Section: Characterization Of the Blob Size And Shapementioning

confidence: 99%

Blob properties in full-turbulence simulations of the TCV scrape-off layer

Nespoli

Furno

Labit

et al. 2017

Plasma Phys. Control. Fusion

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To investigate blob properties in the tokamak scrape-off layer (SOL), we perform dedicated numerical nonlinear simulations of plasma turbulence in the SOL of a TCV discharge using the Global Braginskii Solver code. A blob detection technique is used for the first time in a threedimensional (3D) full-turbulence simulation to track the motion of the filaments in the SOL. The specific size, density amplitude and radial velocity of the blobs are computed, with the typical values being 7.4 s r , n 0.33 e and c 0.016 s , respectively. The analysis of blob structure in the parallel direction shows that the blobs are partially detached from the limiter. The cross correlation analysis shows how the blobs are born all along the entire field line, not being generated primarily on the low field side SOL and expanding towards the limiter. The blob radial velocity agrees well with the inertial branch of the existing scaling law. The radial particle and heat fluxes given by blobs are shown to be responsible of up to 100% and 70% of the turbulent particle and heat flux in the far SOL, respectively. The results of a second simulation with a 40 times higher resistivity are also discussed.

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Section: Characterization Of the Blob Size And Shapementioning

confidence: 99%

Blob properties in full-turbulence simulations of the TCV scrape-off layer

Nespoli

Furno

Labit

et al. 2017

Plasma Phys. Control. Fusion

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“…T e depends approximately on the ratio V/p, where V is the voltage applied to the sputtering target and p is the chamber pressure. 45,46 Therefore, it may be possible to monitor the relative value of T e through comparison of external parameters such as voltage and pressure, which are often monitored during nanoparticle deposition. For the three depositions produced here, the values of (V/p) were 1.1, 2.4, and 1.9 V/mtorr, and the values of T e for each deposition were (a) 1.04, (b) 1.45, and (c) 1.68 eV.…”

Section: Calculating the Cluster Temperaturementioning

confidence: 99%

In situ measurements of plasma properties during gas-condensation of Cu nanoparticles

Koten

Voeller

Patterson

et al. 2016

Journal of Applied Physics

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Since the mean, standard deviation, and modality of nanoparticle size distributions can vary greatly between similar input conditions (e.g., power and gas flow rate), plasma diagnostics were carried out in situ using a double-sided, planar Langmuir probe to determine the effect the plasma has on the heating of clusters and their final size distributions. The formation of Cu nanoparticles was analyzed using cluster-plasma physics, which relates the processes of condensation and evaporation to internal plasma properties (e.g., electron temperature and density). Monitoring these plasma properties while depositing Cu nanoparticles with different size distributions revealed a negative correlation between average particle size and electron temperature. Furthermore, the modality of the size distributions also correlated with the modality of the electron energy distributions. It was found that the maximum cluster temperature reached during plasma heating and the material's evaporation point regulates the growth process inside the plasma. In the case of Cu, size distributions with average sizes of 8.2, 17.3, and 24.9 nm in diameter were monitored with the Langmuir probe, and from the measurements made, the cluster temperatures for each deposition were calculated to be 1028, 1009, and 863 K. These values are then compared with the onset evaporation temperature of particles of this size, which was estimated to be 1059, 1068, and 1071 K. Thus, when the cluster temperature is too close to the evaporation temperature, less particle growth occurs, resulting in the formation of smaller particles. V C 2016 AIP Publishing LLC.

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“…14 Generally, atomic species with high chemical activity can avoid any energetic ion-induced defects. 15 In a previous study, we have reported that exposure of GaN to atomic nitrogen after Cl 2 plasma etching removes chloride residues without generation of point defects in the GaN films while sufficiently passivating Cl 2 plasma-induced defects. 16 In the case of Si, we have also reported that H radical exposure at room temperature passivates deeplevel defects in plasma-damaged Si.…”

confidence: 96%

Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

Shang

Kometani

et al. 2012

AIP Advances

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The effect of in-situ exposure of n-GaN damaged by Cl2 plasma to atomic hydrogen (H radicals) at room temperature was investigated. We found that the PL intensities of the band-edge emission, which had been drastically reduced by plasma-beam irradiation at a Cl ion dose of 5 × 1016 cm−2, recovered to values close to those of as-grown samples after H radical exposure at a dose of 3.8 × 1017 cm−2. XPS revealed the appearance of a peak at a binding energy of 18.3 eV, which is tentatively assigned to Ga-H, and confirmed the removal of Cl after H radical exposure

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Lecture Notes on Principles of Plasma Processing

Cited by 180 publications

References 2 publications

Blob properties in full-turbulence simulations of the TCV scrape-off layer

Blob properties in full-turbulence simulations of the TCV scrape-off layer

In situ measurements of plasma properties during gas-condensation of Cu nanoparticles

Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

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