Leakage currents in ferroelectric thin films

Сигов, А. С.; Podgorny, Yu. V.; Воротилов, К. А.; Vishnevskiy, Alexey S.

doi:10.1080/01411594.2013.790033

Cited by 34 publications

(18 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the low electric fields region, the slope was close to 1, indicating Ohmic conductivity dominating the leakage current. For stronger electric fields, the slope was 2.018, which is consistent with space-charge-limited current (J $me s V 2 /d 3 ) [28]. At high electric fields, the slope exhibited an abrupt increase.…”

Section: Methodssupporting

confidence: 76%

Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film

Fan¹,

Chen²,

Habibul³

et al. 2016

Physica Status Solidi (a)

View full text Add to dashboard Cite

Multilayer thick films ($4 mm) with compositional PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 layers and one-layer PZT thick films were prepared on the silicon substrate by radio-frequency magnetron sputtering. PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 multilayer thick film are characterized by highly preferential (100)-oriented growth and columnar microstructure due to alternately introducing LaNiO 3 seeding layers. The effects of LaNiO 3 layers on microstructure and electrical properties of PbZr 0.3 Ti 0.7 O 3 thick films were investigated in detail. The results show that both PZT and PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 multilayer thick film were pure perovskite crystalline phase.The PbZr 0.3 Ti 0.7 O 3 film texture was dense and well adhered on the LaNiO 3 layer. PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 multilayer thick film possessed obvious enhanced dielectric properties compared with PZT thick film: e r $2450 (10 kHz) and tand $0.02 (10 kHz). Rayleigh law was used to analysis the behavior of the enhanced dielectric properties and the pinched-shaped polarization-electric field hysteresis loops. The larger Rayleigh parameter, a $51.1408 cm kV À1 (1 kHz) indicates the larger extrinsic contribution to permittivity and strong domainwall-defect charge interaction. The leakage current behaviors of the multilayer thick film were also investigated in detail.ß 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1 Introduction With the development of siliconbased microelectromechanical systems (MEMS) technology, ferroelectric/piezoelectric thick films (1-100 mm) are a research hotspot from the viewpoint of their combining the advantages of bulk materials and thin films with high sensitivity, wide frequency range, good mechanical properties, and good compatibility with CMOS devices. PbZr x Ti 1Àx O 3 (PZT)-based thick films possess high reliabilities in applications of high-sensitivity sensors and pyroelectric infrared detectors. In addition, sensors and detectors based on PZT thick film can work in a broader working frequency range compared to those based on PZT thin films since they have higher dielectric constant, piezoelectric coefficient, and pyroelectric coefficient [1][2][3][4]. There are a variety of methods to prepare PZT thick films on silicon substrates, such as screen printing [5,6], sol-gel techniques [7], aerosol deposition [8], and magnetron sputtering [9]. Among them, the PZT thick films prepared by the first three processes need to be heat treated at high temperature (!850 8C), which may cause some issues such as cracks and voids. In contrast, the PZT thick films

show abstract

Section: Methodssupporting

confidence: 76%

Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film

Fan¹,

Chen²,

Habibul³

et al. 2016

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…3,4 For the first case, the measurements are restricted by the voltage sweep rate dependence as a result of transient currents arising at voltage increase. [5][6][7] In addition, despite the fact of the film pre-polarization, a polarization recovery current due to partial depolarization of ferroelectric film may occur that gives an ambiguous interpretation and leads in some cases to observation of negative differential conductivity. 8 So the voltage-ramp method makes it possible to obtain rapidly an overall picture of leakage currents at different electric field strengths, but it is hard to obtain a steady-state or "true" leakage current in ferroelectric films by this technique.…”

mentioning

confidence: 99%

Estimation of steady-state leakage current in polycrystalline PZT thin films

2016

View full text Add to dashboard Cite

Estimation of the steady state (or “true”) leakage current Js in polycrystalline ferroelectric PZT films with the use of the voltage-step technique is discussed. Curie-von Schweidler (CvS) and sum of exponents (Σexp) models are studied for current-time J (t) data fitting. Σexp model (sum of three or two exponents) gives better fitting characteristics and provides good accuracy of Js estimation at reduced measurement time thus making possible to avoid film degradation, whereas CvS model is very sensitive to both start and finish time points and give in many cases incorrect results. The results give rise to suggest an existence of low-frequency relaxation processes in PZT films with characteristic duration of tens and hundreds of seconds.

show abstract

“…The appearance of non-linear currents, reported for BiFeO3 films [26][27][28], occurs at different temperatures for each of them. The activation of these new, non-linear charge transport mechanisms when the electric field increases, in the so called transition region [21], is accompanied by the breakdown of one of the Schottky barriers. It must be taken into account that the height of this barrier decreases with the polarization of the film.…”

Section: Leakage Currentsmentioning

confidence: 99%

“…The onset of non-linear leakage contributions in a short time interval (in this case, the corresponding to the loops frequency) must be attributed to the appearance of a degradation mechanisms. The value of the exponent n in equation (1) gives us information on the variations of the dependence of the current density and the applied voltage, which allows the identification, for example, of a transition region (characterized by a sharp current increase) which is attributed in the studies of steady state leakage current responses toa reversible breakdown of one of the Schottky barriers and the introduction of new charge transport mechanisms[21]. For higher voltages it has been determined that the current present a strong dependence on the applied voltage[21].…”

mentioning

confidence: 99%

“…The value of the exponent n in equation (1) gives us information on the variations of the dependence of the current density and the applied voltage, which allows the identification, for example, of a transition region (characterized by a sharp current increase) which is attributed in the studies of steady state leakage current responses toa reversible breakdown of one of the Schottky barriers and the introduction of new charge transport mechanisms[21]. For higher voltages it has been determined that the current present a strong dependence on the applied voltage[21]. Besides, in order to ascertain any correlation between the film degradation and ferroelectric switching, the leakage curves are represented vs. the ratio between the voltage and the coercive voltage for each of them.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Polarization switching at room temperature of undoped BiFeO3 thin films crystallized at temperatures between 400 ≤ T ≤ 500 °C

Pérez-Rivero

Tomczyk

Jiménez

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Pure BiFeO3 perovskite thin films have been prepared on Pt-coated silicon substrates by chemical solution deposition at temperatures below 500ºC. Precursor solutions with and without Bi(III) excess have been used. Perovskite films without crystalline secondary phases, as detected by X-ray diffraction analysis, are obtained at the lowest temperature limit of 400ºC. However, the scanning electron micrographs of these films show surface microstructures formed by well defined grains surrounded by a fine grained phase, suggesting the appearance of a volume fraction of crystals in an early stage of crystallization. The films prepared with Bi(III) excess have better defined ferroelectric hysteresis loops than those without any excess, especially for the films annealed at 400ºC, which can be attributed to an improved connectivity of the ferroelectric phase. This together with the fact that leakage current densities in the films decrease with decreasing the processing temperature, make that the BiFeO3 films prepared with Bi(III) excess and annealed at 400ºC and 450ºC can be poled at room temperature, obtaining an effective switching of the ferroelectric polarization with the electric field. Remanent polarization values of PR10 C/cm 2 and PR60 C/cm 2 with coercive fields of EC205 kV/cm and 235 kV/cm were obtained for the films prepared at 400ºC and 450ºC, respectively. The demonstration of the functionality at room temperature of these low temperature processed undoped BiFeO3 thin films increases the interest in these materials for their integration in multiferroic devices.

show abstract

Leakage currents in ferroelectric thin films

Cited by 34 publications

References 12 publications

Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film

Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film

Estimation of steady-state leakage current in polycrystalline PZT thin films

Polarization switching at room temperature of undoped BiFeO3 thin films crystallized at temperatures between 400 ≤ T ≤ 500 °C

Contact Info

Product

Resources

About

Leakage currents in ferroelectric thin films

Cited by 34 publications

References 12 publications

Dielectric enhancement of PbZr0.3Ti0.7O3/LaNiO3 multilayer thick film

Dielectric enhancement of PbZr0.3Ti0.7O3/LaNiO3 multilayer thick film

Estimation of steady-state leakage current in polycrystalline PZT thin films

Polarization switching at room temperature of undoped BiFeO3 thin films crystallized at temperatures between 400 ≤ T ≤ 500 °C

Contact Info

Product

Resources

About

Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film

Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film