2018
DOI: 10.1088/1748-0221/13/04/t04003
|View full text |Cite
|
Sign up to set email alerts
|

Leakage current-induced effects in the silicon microstrip and gas electron multiplier readout chain and their compensation method

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
4

Relationship

1
3

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 20 publications
0
1
0
Order By: Relevance
“…The measured values may differ from the simulated ones significantly, and the resulting uncompensated leakage current may flow into, or from the CSA. That in conjunction with high feedback resistance causes a DC offset between CSA input and output in idle state, which may lead to the change of the effective feedback resistance (if MOS transistor is used) and, if reset switch at the CSA is applied, fake hits or even instability [11].…”
Section: Jinst 14 C11030mentioning
confidence: 99%
“…The measured values may differ from the simulated ones significantly, and the resulting uncompensated leakage current may flow into, or from the CSA. That in conjunction with high feedback resistance causes a DC offset between CSA input and output in idle state, which may lead to the change of the effective feedback resistance (if MOS transistor is used) and, if reset switch at the CSA is applied, fake hits or even instability [11].…”
Section: Jinst 14 C11030mentioning
confidence: 99%