Leakage current characteristics and the energy band diagram of Al/ZrO₂/Si_0.3Ge_0.7hetero-MIS structures

Abstract

Zirconium oxide (ZrO 2 ) films have been deposited on Ge-rich SiGe heterolayers at 150 • C by the microwave plasma enhanced chemical vapour deposition (PECVD) technique using zirconium tetra-tert-butoxide. The possible conduction mechanisms in deposited ZrO 2 films have been investigated at both room and high temperature. It is found that the conduction mechanism is dominated by Schottky emission at a low electric field (E < 1.2 MV cm −1 ). The intrinsic barrier height between Al and ZrO 2 was found to be 0.83 eV. The trap-assisted Poole-Frenkel conduction mechanism is found to take place at a relatively high electric field (E > 1.2 MV cm −1 ). The extracted trap energy is about 0.78 eV from the conduction band of ZrO 2 . It is shown that the current in ZrO 2 films exhibits strong temperature dependence at a low electric field. The trapping behaviour of the charge carriers in thin ZrO 2 gate dielectric stacks during constant gate voltage stress of metal-oxide-semiconductor capacitors has also been investigated.

Synthesis and Electrical Transport of Single-Crystal NH4V3O8 Nanobelts

“…The dielectric constant ( r ) 129.3) obtained from the slope of the straight line in the Poole-Frenkel plot also corresponds to that obtained from the C-V technique. 24 The NH 4 V 3 O 8 nanobelts are found to have some bulk and surface defects, as shown by triangles in Figure 3b. Therefore, the Poole-Frenkel emission in this case is the preferable mechanism that agrees with the results described in the reference.…”

Electrical Transport Properties of Large, Individual NiCo2O4 Nanoplates

“…One can see that the straight‐line dependence of E 1/2 on J at an electric field higher than 59 V cm −1 (applied voltage: 0.3 V), suggesting Schottky emission. Generally, the Schottky current is expressed as follows:29, 30 Here, A is a constant, Φ is the Schottky barrier height, q is the electrical charge, k is Boltzmann's constant, and E is the electric field. The constant β SE is given as follows: Here, ϵ 0 is the permittivity of the free space, and ϵ r is the dielectric constant.…”

Synthesis and Electrical Transport of Novel Channel‐Structured β‐AgVO3

“…Figure 6 b shows the I – V curve on the scale of log( I ). As can be seen from Figure 6 b, at low electric fields the electrical conduction in the channel‐structured individual β ‐AgVO 3 fiber follows an ohmic mechanism; at medium electric fields, the straight‐line nature of the ln( J )≈ E 1/2 curve (inset I) implies Schottky emission;19, 20 at high electric fields, a straight line is obtained in the experimental plot of ln( J / E ) versus E 1/2 (inset II), which is related to the Pool–Frenkel mechanism, as described in the literature 19. 21 It is noted that the I – V plot of bulk single crystals of β ‐AgVO 3 (made by pressing the β ‐AgVO 3 powder into pellets under a pressure of 15 tons cm −2 ) mainly shows ohmic electrical transport.…”