Lead salt quantum effect structures

Partin, D. L.

doi:10.1109/3.7102

Cited by 163 publications

(50 citation statements)

References 135 publications

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“…6,9,10 Above this temperature Auger recombination dominates on a 0.1-2-ns time scale. The sophistication of a three-beam pump-probe experimental technique described below has enabled an analysis of the decay at times longer than 100 ps in terms of the nonparabolic anisotropic band structure of the lead salts, to give the Auger coefficient C qualitatively over a wide temperature range 30-300 K. The results are in good agreement with theory for nonparabolic, anisotropic bands 11,12 and nondegenerate statistics, 2 and confirm that the original parabolic band calculations 1 underestimated the measured lifetime by more than an order of magnitude. [2][3][4]6 Finally the Auger results for the lead salts are compared with earlier measurements taken at FELIX ͑Ref.…”

Section: Introductionmentioning

confidence: 58%

Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation

et al. 1998

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Pump-probe transmission experiments have been performed on PbSe above the fundamental absorption edge near 4 m in the temperature range 30 to 300 K, using the Dutch ps free-electron laser. For temperatures below 200 K and carrier densities above the threshold for stimulated emission, stimulated recombination represents the most efficient recombination mechanism with relatively fast kinetics in the 50-100-ps regime, in good agreement with earlier reports of photoluminescent emission. Above this temperature Auger recombination dominates, and the Auger coefficient C is determined from the pump-probe decay curves. In the lowtemperature regime the Auger coefficient is determined from the decay curves at times beyond 100 ps. The Auger coefficient is approximately constant ͑with a value of about 8ϫ10 Ϫ28 cm 6 s Ϫ1) between 300 and 70 K, and then drops a value of about 1ϫ10 Ϫ28 cm 6 s Ϫ1 at 30 K, in good agreement with the theory for nonparabolic near-mirror bands and nondegenerate statistics. It is found that C for PbSe is between one and two orders of magnitude lower than for Hg 1Ϫx Cd x Te of comparable band gap. ͓S0163-1829͑98͒07243-9͔

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Section: Introductionmentioning

confidence: 58%

Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation

et al. 1998

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“…As is commonly believed they are promising materials for infrared detectors and semiconducting lasers [1]. Therefore, the following important problems arose: understanding the heterojunction energy diagram and deformation shifts in strained heterostructures.…”

Section: Introductionmentioning

confidence: 99%

A Photoluminescence Study in PbS-EuS Superlattices

et al. 1998

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Investigations of the photoluminescence of PbS-EuS superlattices deposited on (111)DaF2 substrates are presented. Quantum-size and deformation effects in photoluminescence spectra are observed. The strain-induced gap shift and valence-band offset is determined from experimental results. A strong stimulated photoluminescence with relatively low threshold was observed. It was found that the photocarriers generated in EuS barrier strongly affect the population of PbS subbands.

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“…New interesting research possibilities were opened by alloying the binary and also ternary lead salts with rare-earth elements to produce compounds with higher energy gaps and their respective multi-layer heterostructures [1][2][3][4][5]. Usually, PbTe is used for the quantum wells and ternary Pb 1−x Eu x Te with x ≤ 0.05 for the barriers.…”

Section: Introductionmentioning

confidence: 99%

Growth and structural characterization of PbTe/PbEuTe double barrier

Anjos¹,

Abramof²,

Rappl³

2006

Braz. J. Phys.

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A series of PbTe/PbEuTe double barrier samples with different barrier widths were successfully grown on BaF 2 substrates by molecular beam epitaxy. The electron concentration of PbTe spacer and well layers was controlled by the deviation from stoichiometry, while the buffer and cap layers were intentionally doped with bismuth to obtain low-resistivity layers to be used as top and bottom contacts. Assuming 50% of band offset, a barrier height of 150 meV was determined by infrared transmission measurements, corresponding to a PbEuTe barrier with 5% of europium content. The structural parameters of the samples were accurately determined by combining the measurement in a high-resolution x-ray diffractometer in the triple-axis configuration with a simulation within the framework of dynamical theory of diffraction.

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Lead salt quantum effect structures

Cited by 163 publications

References 135 publications

Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation

Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation

A Photoluminescence Study in PbS-EuS Superlattices

Growth and structural characterization of PbTe/PbEuTe double barrier

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