“…29,30 MnTe is a p-type chalcogenide semiconductor with a direct band gap of 1.3 eV and indirect band gap of 0.8 eV at room temperature, which has attracted increasing attention among the thermoelectric community as a lead-free alternative. 31,32 However, the low electrical conductivity of pristine MnTe owing to its low carrier concentration (∼10 18 cm −3 ) and low hole mobility (∼6 cm 2 V −1 s −1 ) severely restricts its thermoelectric performance, with a ZT value of only ∼0.5 at 823 K. 33 Therefore, it is of interest to enhance its electrical conductivity through substitution of monovalent metals (e.g., Ag, 32 Cu, 34 Li, 35 Na 36 ) for Mn and incorporation of inclusions with high electrical conductivities (e.g., SnTe, 37 Ag 2 S, 38 graphene, 39 Sb 2 Te 3 ). 40 Generally, MnTe crystallizes in a hexagonal crystal structure with a space group of P6 3 /mmc (No.…”