2014
DOI: 10.1002/adma.201401991
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Lead‐Free Halide Perovskite Solar Cells with High Photocurrents Realized Through Vacancy Modulation

Abstract: Lead free perovskite solar cells based on a CsSnI3 light absorber with a spectral response from 950 nm is demonstrated. The high photocurrents noted in the system are a consequence of SnF2 addition which reduces defect concentrations and hence the background charge carrier density.

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Cited by 1,020 publications
(1,177 citation statements)
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References 33 publications
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“…Meanwhile, SnF 2 was included in the precursor as an additive, as it is reported to suppress the doped hole density in Sn‐based perovskites 16, 17. To investigate the intercalation of FA and MA cations in our mixed‐cation perovskites, we measured the X‐ray diffraction (XRD) patterns of these perovskite films on ITO/PEDOT:PSS substrates ( Figure 1 a).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Meanwhile, SnF 2 was included in the precursor as an additive, as it is reported to suppress the doped hole density in Sn‐based perovskites 16, 17. To investigate the intercalation of FA and MA cations in our mixed‐cation perovskites, we measured the X‐ray diffraction (XRD) patterns of these perovskite films on ITO/PEDOT:PSS substrates ( Figure 1 a).…”
Section: Resultsmentioning
confidence: 99%
“…For example, SnF 2 , as an additive, has been found to effectively suppress the doped hole density in Sn‐based perovskites and improve device stability and reproducibility 16, 17. The use of dimethyl sulfoxide (DMSO) as the precursor solvent has proven to be crucial in acquiring homogeneous films, as it forms a SnI 2 ·3DMSO intermediate phase that retards the rapid crystallization of Sn‐based perovskites 18.…”
Section: Introductionmentioning
confidence: 99%
“…The magic effect of SnF 2 attracted researcher to investigate its working mechanism. In 2014, Kumar et al69 demonstrated for the first time that the introduction of SnF 2 into CsSnI 3 can reduce Sn vacancies and background carrier densities. Therefore, high J SC of more than 22 mA cm −2 and a PCE of 2.02% were achieved in contrast to the nonfunctioning devices without SnF 2 .…”
Section: Lead‐free Halide Hybrid Perovskite and Related Absorbersmentioning
confidence: 99%
“…The conventional one‐step film deposition method of tin perovskites often engenders randomly oriented film growth accompanied by forming large crystals platelets and poor surface coverage with micron‐sized pinholes 46. The flawed films further led to the poorly performing devices 69. Moreover, due to the reaction kinetics between organic/inorganic halide and tin halide salts is faster than its lead analogs,19, 46, 156 the control of tin perovskite crystallization during the deposition process is more challenging.…”
Section: Lead‐free Halide Hybrid Perovskite and Related Absorbersmentioning
confidence: 99%
“…[12,13] In an attempt to improve the PCE, research efforts have been directed towards optimization of the tin-perovskite film morphology, tuning the film composition, use of a reducing agent, and modification of the device structure. [14][15][16][17][18][19][20][21] The main challenges for further improving the PCE lie in preventing the easy formation of Sn vacancies due to their small formation energy and the fast oxidation of divalent Sn 2+ into more stable Sn 4+ . This causes high levels of self-p-doping in Sn-based perovskite films, with consequent severe recombination losses for charge carriers.…”
Section: Doi: 101002/aenm201702019mentioning
confidence: 99%