Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

Abstract

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

Exploring a Lead‐free Semiconducting Hybrid Ferroelectric with a Zero‐Dimensional Perovskite‐like Structure

“…As far as we are aware,t he large ferroelectric polarization might create ahigh built-in electrostatic field. [22] Herein, we estimate the local electric field at ferroelectric interfaces from m = e r e 0 E,w here m is charge density,w hich is related to remnant polarization (P r % 7.3 mCcm À2 ). Dielectric constants (e r )are 10-16 at room temperature,and e 0 denotes the vacuum permittivity.T herefore,t he built-in electric field (E)i se stimated to be approximately 2 10 5 Vmm À1 .S uch ahigh electric field might enhance the separation of photongenerated charge carriers and improve the semiconducting behavior of 1.…”

Efficient simultaneous adsorption-biodegradation of high-concentrated N,N-dimethylformamide from water by Paracoccus denitrificans-graphene oxide microcomposites

“…As a fascinating new nanomaterial, graphene oxide (GO) which is an amazing derivative of graphene, has attracted great attention all over the world recently 18 19 20 21 22 23 24 . In addition, GO has been used as an effective adsorbent on the treatment of different kinds of organic wastewater owing to its extraordinary mechanical strength and relatively large specific area 25 26 27 28 29 . And because GO is heavily decorated by oxygen-containing groups (carboxyl, hydroxyl, epoxy) on their basal planes and edges, various of polymers can be modified on the surface of GO easily, which cause a higher efficiency to the adsorption of organic contaminants than GO 30 31 32 33 34 35 .…”

Exploring a Lead‐free Semiconducting Hybrid Ferroelectric with a Zero‐Dimensional Perovskite‐like Structure

“…Such figures are close to that integrated by the pyroelectric currents (Figure 2d), and among the highest values for hybrid ferroelectrics,s uch as bis(cyclohexylaminium) tetrabromo lead, [20a] (3-pyrrolinium)CdCl 3 , [20b] and (benzylammonium) 2 PbCl 4 . [22] Herein, we estimate the local electric field at ferroelectric interfaces from m = e r e 0 E,w here m is charge density,w hich is related to remnant polarization (P r % 7.3 mCcm À2 ). As far as we are aware,t he large ferroelectric polarization might create ahigh built-in electrostatic field.…”