Lead based ferroelectric capacitors for low voltage non-volatile memory applications

Aggarwal, S.; Prakash, Amit; Song, Tian‐shun; Sadashivan, S.; Dhote, A. M.; Yang, Bo; Ramesh, R.; Kisler, Yanina; Bernacki, S. E.

doi:10.1080/10584589808012702

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Cited by 6 publications

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“…operation certainly merit serious consideration for use in actual high-density memories that will likely function with operating voltage levels in this range [6] . Detailed characterization of the ferroelectric properties of these heterostructures show attractive fatigue, retention and imprint properties, which are discussed in the following sections.…”

Section: Epi or Poly-simentioning

confidence: 99%