Layout and performance of HPK prototype LGAD sensors for the High-Granularity Timing Detector

Yang, X.; Alderweireldt, S.; Atanov, N.; Ayoub, M. K.; Costa, J. Barreiro Guimarães da; García, L. Castillo; Chen, Hongey; Christie, Simon; Cindro, V.; Cui, H.; D’amen, G.; Davydov, Yu. I.; Fan, Yunyun; Galloway, Z.; Ge, Jin; Gee, C. M.; Giacomini, G.; Gkougkousis, E. L.; Grieco, C.; Grinstein, S.; Große-Knetter, J.; Guindon, S.; Han, Song; Howard, A. S.; Huang, Yongsheng; Jin, Yufeng; Jing, M. Q.; Kiuchi, R.; Kramberger, G.; Kuwertz, E. S.; Labitan, C.; Lange, J.; Leite, Marina; Li, C.H.; Li, Q.Y.; Liu, Bo; Liu, Jie-Ying; Liu, Y.W.; Liang, Hongwei; Liang, Z.; Lockerby, M.; Lyu, F.; Mandić, I.; Martinez-McKinney, F.; Mazza, S. M.; Mikuž, M.; Padilla, R.; Qi, Biao; Quadt, A.; Ran, K.; Ren, Hang; Rizzi, C.; Rossi, Enrico; Sadrozinski, H. F-W.; Saito, G.T.; Schumm, B. A.; Schwickardi, M.; Seiden, A.; Shan, Liang; Shi, Liting; Shi, X.; Ferreira, André S.; Sun, Yutong; Tan, Yuhang; Tricoli, A.; Wan, Guohui; Wilder, M.; Wu, Kewei; Wyatt, William F.; Xiao, Shu-Hua; Yang, Tao; Yang, Yaqing; Yu, Chenxia; Liu, Zhao; Zhao, Mei; Zhao, Y.; Zhao, Z.; Zheng, Xiangxuan; Zhuang, X.

doi:10.1016/j.nima.2020.164379

Cited by 22 publications

(14 citation statements)

References 6 publications

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“…Currently, a few research facilities around the world are involved in the development of LGADs, such as Brookhaven National Laboratory (BNL, Upton, NY, USA) [ 7 ], CNM, Fondazione Bruno Kessler (FBK, Trento, Italy) [ 8 ], Hamamatsu (Japan) [ 9 ], IHEP-NDL (Beijng, China) [ 10 ] and Micron (Lancing, UK) [ 11 ]. In addition, read-out electronics are actively being developed.…”

Section: Introductionmentioning

confidence: 99%

LGAD-Based Silicon Sensors for 4D Detectors

Giacomini

2023

Sensors

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Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.

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Section: Introductionmentioning

confidence: 99%

LGAD-Based Silicon Sensors for 4D Detectors

Giacomini

2023

Sensors

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“…Low Gain Avalanche Detectors (LGADs) have been widely studied during the last years by the high energy physics community [ 1 , 2 , 3 , 4 , 5 ]. Based on the Avalanche Photodiode (APD) concept, the LGAD exhibits an intrinsic multiplication in the linear region, providing a gain of 5–20.…”

Section: Introductionmentioning

confidence: 99%

Inverse LGAD (iLGAD) Periphery Optimization for Surface Damage Irradiation

Doblas

Flores

Hidalgo

et al. 2023

Sensors

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Pixelated LGADs have been established as the baseline technology for timing detectors for the High Granularity Timing Detector (HGTD) and the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area present between pixels and the consequent reduction in the fill factor. To overcome this issue, the inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and provide excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for surface damage irradiation by developing a new generation of iLGADs, the periphery of which is optimized to improve the performance of irradiated sensors. The fabricated iLGAD sensors exhibit good electrical performances before and after X-ray irradiation.

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“…They have been pioneered by the Centro Nacional de Microelectronica (CNM, Barcelona, Spain) [7] and developed during the past few years within the CERN-RD50 community. Currently, the sensor R&D is still very active and many research facilities around the world are involved such as: Brookhaven National Laboratory (BNL, Upton, United States) [8], CNM, Fondazione Bruno Kessler (FBK, Trento, Italy) [9], Hamamatsu (Japan) [10], IHEP-NDL (Beijng, China) [11], Micron (Lancing, United Kingdom) [12]. It is worth mentioning that there are families of LGADs which are fabricated on thick substrates: iLGADs [13] are double-sided LGADs (multiplication layer on one side and hole-collecting finepitch electrodes on the opposite side of the wafer) which are fabricated on thick high-resistivity silicon wafers.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes

Giacomini

2021

Front. Phys.

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Low-Gain Avalanche Diodes are a recently-developed class of silicon sensors. Characterized by an internal moderate gain that enhances the signal amplitude and if built on thin silicon substrates of a few tens of microns, they feature fast signals and exhibit excellent timing performance. Thanks to their fast timing they are planned to be exploited in timing detectors in High-Energy Physics experiments, for example for the upgrades of the ATLAS and CMS detectors at the High Luminosity Large Hadron Collider (HL-LHC) at CERN. However, to achieve a spatially uniform multiplication a large pixel pitch is needed, preventing a fine spatial resolution. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. The fabrication technology is similar for the two LGAD families, although a fine tuning of a few process parameters needs to be carefully studied. Other R&D efforts towards detectors that can simultaneously provide good time and spatial resolution, based on the LGAD concept, are under way. These efforts aim also to mitigate the loss of performance at high irradiation fluences due to the acceptor removal within the gain layer. In this paper we describe the main points in the fabrication of LGADs and AC-LGADs in a clean-room. We also discuss novel efforts carried on related topics.

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Layout and performance of HPK prototype LGAD sensors for the High-Granularity Timing Detector

Cited by 22 publications

References 6 publications

LGAD-Based Silicon Sensors for 4D Detectors

LGAD-Based Silicon Sensors for 4D Detectors

Inverse LGAD (iLGAD) Periphery Optimization for Surface Damage Irradiation

Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes

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