Layout analysis as supporting tool for failure localization: Basic principles and case studies

Leakage current study and relevant defect localization in integrated circuit failure analysis

“…Photon Emission Microscopy (PEM) [1][2][3] and Lock-in Infrared Optical Beam Induced Resistance Change (IR-OBIRCH) [4][5][6] are two effective FA techniques to analyze the leakage currents and to localize the relevant defects within ICs. They are non-destructive FA methods and can be performed both on topside ICs or backside ICs.…”