Layered deposition of SnS<sub>2</sub> grown by atomic layer deposition and its transport properties

Lee, Namgue; Lee, Gunwoo; Choi, Hyun-Woong; Park, Hyun-Woo; Choi, Yeonsik; Seo, Hojun; Ju, Hyoungbeen; Kim, Sun‐Jin; Sul, Onejae; Lee, Jeongsu; Lee, Seung Beck; Jeon, Hyeongtag

doi:10.1088/1361-6528/ab2d89

Cited by 19 publications

(22 citation statements)

References 41 publications

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“…2020 [196] MoCl 5 + S(SiMe 3 ) 2 375 (800, S) (t)Au/Cr/Al 2 O 3 */MoS 2 */GaN 8 ML 3.5 (2-4) n 10 2 2019 [197] 300 (900, S) (t)Au/Cr/Al 2 O 3 */MoS 2 */sapphire 5 ML ≈3 (2.3-3.2) n ≈10 3 2019 [198] 350 (900, S) (t)Au/Cr/Al 2 O 3 */MoS 2 */sapphire 4 ML 0.56 d) 6.4 (≈3-10) e) n n >10 6 10 3 2020 [202] 400 (900, S) 2020 [199] 375 (800, inert) (+ 400, CS 2 ) 2017 [118] Mo 2017 [281] 155 (400, Ar + 500, S + 900, S) 2017 [241] 150 ( 2019 [242] 150 ( 2020 [70] Sn(dmamp) 2 + H 2 S plasma 150…”

Section: Field-effect Transistorsmentioning

confidence: 99%

“…k) Reproduced with permission. [242] Copyright 2019, IOP Publishing Ltd. The mobility values in parenthesis represent the device-to-device variation, if reported; d) 120 min annealing; e) 30 min annealing; f) SEt 2 pretreatment; g) No pretreatment; h) As-deposited; i) Annealed; j) Hole/electron (p-type/n-type) mobility.…”

Section: Field-effect Transistorsmentioning

confidence: 99%

“…More recently, Lee et al [242] prepared thinner, 4 and 6 ML thick SnS 2 films using the Sn(NMe 2 ) 4 + H 2 S process combined with a lengthy multistep annealing procedure in a H 2 S/ Ar atmosphere at 100 to 350 °C. The FETs exhibited high I on /I off ratios up to 8.3 × 10 6 , whereas their mobilities were still relatively low, 0.06 and 0.08 cm 2 V −1 s −1 for the 4 and 6 ML films (Figure 11j).…”

Section: Field-effect Transistorsmentioning

confidence: 99%

“…partly cryst, ann. ≈10-20 nm) FET [242] 150 (100 to 350 (multistep), H 2 S) 7-10 ML films (as-dep. partly cryst, ann.…”

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confidence: 99%

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Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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Section: Field-effect Transistorsmentioning

confidence: 99%

Section: Field-effect Transistorsmentioning

confidence: 99%

Section: Field-effect Transistorsmentioning

confidence: 99%

“…partly cryst, ann. ≈10-20 nm) FET [242] 150 (100 to 350 (multistep), H 2 S) 7-10 ML films (as-dep. partly cryst, ann.…”

mentioning

confidence: 99%

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Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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“…Aside from XRD characterization, we utilized Raman spectroscopy at 532 nm excitation wavelength ( Figure 2 c,d) to distinguish between two hexagonal configurations, 1T and 2H. Raman spectrum of SnS 2 reveals out-of-plane vibration mode A 1g at ~314 cm −1 and in-plane vibration of E g at ~205 cm −1 , corresponding to 1T polytype [ 44 , 49 , 50 ]. Similar to SnS 2 , SnSe 2 Raman spectrum has two characteristic phonon modes: A 1g mode at ~185 cm −1 and E g mode at ~116.5 cm −1 , associated with 1T-phase [ 36 , 51 ].…”

Section: Resultsmentioning

confidence: 99%

Broadband Optical Constants and Nonlinear Properties of SnS2 and SnSe2

et al. 2021

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SnS2 and SnSe2 have recently been shown to have a wide range of applications in photonic and optoelectronic devices. However, because of incomplete knowledge about their optical characteristics, the use of SnS2 and SnSe2 in optical engineering remains challenging. Here, we addressed this problem by establishing SnS2 and SnSe2 linear and nonlinear optical properties in the broad (300–3300 nm) spectral range. Coupled with the first-principle calculations, our experimental study unveiled the full dielectric tensor of SnS2 and SnSe2. Furthermore, we established that SnS2 is a promising material for visible high refractive index nanophotonics. Meanwhile, SnSe2 demonstrates a stronger nonlinear response compared with SnS2. Our results create a solid ground for current and next-generation SnS2- and SnSe2-based devices.

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Controlling Atomic Layer Deposition of 2D Semiconductor SnS₂ by the Choice of Substrate

Mattinen

King

Brüner³

et al. 2020

Adv Materials Inter

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been explored. The 2D semiconductors, such as MoS 2 , have become the topic of particularly active research due to the crucial role of semiconductors in modern microelectronics. [7-11] Tin disulfide (SnS 2) has recently emerged as a highly interesting 2D semiconductor. [12,13] It crystallizes in the CdI 2-type 2D structure (1T phase) similar to many TMDCs [12,14] and has a fairly large, indirect band gap of approximately 2.2 eV in bulk [13,15] and 2.4−2.6 eV as a monolayer. [15,16] SnS 2 has already shown performance comparable to the benchmark 2D semiconductor, MoS 2 , in applications such as FETs [9,12,17-19] and photodetectors. [12,20] Furthermore, possible reduction in shortchannel leakage [20,21] due to the larger, indirect band-gap of SnS 2 and higher predicted mobility [22] compared to MoS 2 make SnS 2 a favorable material for electronics. Other promising applications for SnS 2 include lithium and sodium-ion batteries, [23,24] gas sensing, [25] and various kinds of catalysis. [26-28] Synthesis of 2D materials including SnS 2 is, however, a major obstacle for the realization of practical applications. An ideal synthesis method should offer high material quality, monolayer-level thickness control as well as good uniformity on large areas and complex shapes-preferably all at low processing temperatures. The substrate is an integral part of the deposition process and applications, and there are great needs both for methods capable of directly synthesizing 2D materials on different substrates, as well as for methods depositing highquality materials on single-crystalline substrates. The latter route could be combined with a transfer of the deposited material onto another substrate, if needed. [29-31] High-quality, few-layer SnS 2 has been produced from bulk crystals by micromechanical exfoliation, [12,17] but this method offers very limited control over the flake size and thickness and has extremely low throughput. Vapor-phase deposition techniques, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), are promising techniques for the deposition of 2D materials. Thus far, CVD has been mostly used to produce high-quality, isolated few-layer flakes of SnS 2 at 450-700 °C. [16,18,32,33] CVD of continuous SnS 2 films was demonstrated recently, but films below 3-4 nm in thickness remained discontinuous and even 15 nm thick films contained some holes. [34,35] ALD has been used to deposit continuous SnS 2 films with thicknesses from approximately two up to tens of monolayers. [36-41] In addition to thermal ALD processes, [36-39] Semiconducting 2D materials, such as SnS 2 , hold great promise in a variety of applications including electronics, optoelectronics, and catalysis. However, their use is hindered by the scarcity of deposition methods offering necessary levels of thickness control and large-area uniformity. Herein, a low-temperature atomic layer deposition (ALD) process is used to synthesize up to 5 × 5 cm 2 continuous, few-layer SnS 2 films on a variety of substrates, including SiO 2 /Si, S...

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Layered deposition of SnS₂ grown by atomic layer deposition and its transport properties

Cited by 19 publications

References 41 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Broadband Optical Constants and Nonlinear Properties of SnS2 and SnSe2

Controlling Atomic Layer Deposition of 2D Semiconductor SnS₂ by the Choice of Substrate

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Layered deposition of SnS2 grown by atomic layer deposition and its transport properties

Cited by 19 publications

References 41 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Broadband Optical Constants and Nonlinear Properties of SnS2 and SnSe2

Controlling Atomic Layer Deposition of 2D Semiconductor SnS2 by the Choice of Substrate

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Product

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Layered deposition of SnS₂ grown by atomic layer deposition and its transport properties

Controlling Atomic Layer Deposition of 2D Semiconductor SnS₂ by the Choice of Substrate