Abstract:Detecting low dose rates of X-rays is critical for making safer radiology instruments, but is limited by the absorber materials available. Here, we develop bismuth oxyiodide (BiOI) single crystals into effective X-ray detectors. BiOI features complex lattice dynamics, owing to the ionic character of the lattice and weak van der Waals interactions between layers. Through use of ultrafast spectroscopy, first-principles computations and detailed optical and structural characterisation, we show that photoexcited c… Show more
“…We note that it has been hypothesized that self-trapping is particularly prominent in materials with reduced electronic dimensionality; ,, however, despite showing reduced electronic dimensionality and evidence for sizable electron–phonon coupling, charge carriers in BiOI clearly remain delocalized large polarons over their lifetimes, displaying bandlike transport. Suppression of such effects may result from the symmetry of the lattice phonons coupled to the excited state, which was recently found to be orthogonal to the quasi-2D charge-carrier density confined in the BiOI layers . As such, these findings thus enhance the prospects of other low-dimensional PIMs emerging with suitable electronic transport for photovoltaic applications.…”
mentioning
confidence: 86%
“…Suppression of such effects may result from the symmetry of the lattice phonons coupled to the excited state, which was recently found to be orthogonal to the quasi-2D charge-carrier density confined in the BiOI layers. 44 As such, these findings thus enhance the prospects of other lowdimensional PIMs emerging with suitable electronic transport for photovoltaic applications. Furthermore, our findings suggest that significant defect densities may limit the photovoltaic performance of devices based on the BiOI thin films.…”
Section: = [ + ]mentioning
confidence: 99%
“…The first-principles simulation attributed the phonon modes at 1.65 and 2.88 THz to Bi–I vibrations, whereas the mode at 8.88 THz was suggested to originate from in-plane vibration of O atoms; however, no theoretical assignment of the peak we observe at 3.75 THz has been made to date. Complementary Raman investigations have been reported for single crystals of BiOI revealing additional Raman-active phonon modes at 50 cm –1 (1.50 THz) and 86 cm –1 (2.58 THz) …”
mentioning
confidence: 96%
“…Crucially, BiOI also features high stability and a favorable electronic structure, i.e., antibonding nature of frontier orbitals, potentially leading to defect tolerance . BiOI crystallizes in a layered tetragonal matlockite structure with stacks of [I-O-Bi-O-I] sheets held together in the [001] direction by weak van der Waals interactions. , Owing to its layered structure, it is a highly anisotropic material with low effective charge-carrier masses along the [I-O-Bi-O-I] planes and high effective masses across the planes. ,,, Thus, crystal orientation (with planar layers growing perpendicular to the charge extraction layers) is crucial for efficient charge-carrier extraction in BiOI-based solar cells. However, despite a successful demonstration by Jagt et al of a highly oriented growth of BiOI with vertically aligned planes connecting electrodes, the device demonstrated a PCE of only 2%, making an investigation into the nature of the charge-carrier mobilities, localization, and recombination in thin BiOI films a highly topical subject of research.…”
mentioning
confidence: 99%
“…Despite the highly promising photocatalytic properties of bismuth oxyhalides, − only a handful of studies have focused on photovoltaic applications. − Given its wide bandgap of around ∼1.8–1.9 eV, , bismuth oxyiodide (BiOI) is well suited to tandem photovoltaic applications, for example, as a top-cell absorber layer in combination with a Si-bottom cell . First-principles calculations have predicted BiOI to have an indirect bandgap (featuring the conduction band minimum in the Γ-R line and valence band maximum within the Z-R line of the Brillouin zone) ∼40 meV lower than the direct bandgap . While a direct bandgap is generally considered ideal for photovoltaic applications, the presence of an indirect bandgap lying close to the direct transition has been theoretically linked to an advantage in photovoltaic performance (facilitated by a balance between enhanced charge-carrier extraction and strong band-edge absorption) .…”
Following the emergence of lead halide perovskites (LHPs)
as materials
for efficient solar cells, research has progressed to explore stable,
abundant, and nontoxic alternatives. However, the performance of such
lead-free perovskite-inspired materials (PIMs) still lags significantly
behind that of their LHP counterparts. For bismuth-based PIMs, one
significant reason is a frequently observed ultrafast charge-carrier
localization (or self-trapping), which imposes a fundamental limit
on long-range mobility. Here we report the terahertz (THz) photoconductivity
dynamics in thin films of BiOI and demonstrate a lack of such self-trapping,
with good charge-carrier mobility, reaching ∼3 cm2 V–1 s–1 at 295 K and increasing
gradually to ∼13 cm2 V–1 s–1 at 5 K, indicative of prevailing bandlike transport.
Using a combination of transient photoluminescence and THz- and microwave-conductivity
spectroscopy, we further investigate charge-carrier recombination
processes, revealing charge-specific trapping of electrons at defects
in BiOI over nanoseconds and low bimolecular band-to-band recombination.
Subject to the development of passivation protocols, BiOI thus emerges
as a superior light-harvesting semiconductor among the family of bismuth-based
semiconductors.
“…We note that it has been hypothesized that self-trapping is particularly prominent in materials with reduced electronic dimensionality; ,, however, despite showing reduced electronic dimensionality and evidence for sizable electron–phonon coupling, charge carriers in BiOI clearly remain delocalized large polarons over their lifetimes, displaying bandlike transport. Suppression of such effects may result from the symmetry of the lattice phonons coupled to the excited state, which was recently found to be orthogonal to the quasi-2D charge-carrier density confined in the BiOI layers . As such, these findings thus enhance the prospects of other low-dimensional PIMs emerging with suitable electronic transport for photovoltaic applications.…”
mentioning
confidence: 86%
“…Suppression of such effects may result from the symmetry of the lattice phonons coupled to the excited state, which was recently found to be orthogonal to the quasi-2D charge-carrier density confined in the BiOI layers. 44 As such, these findings thus enhance the prospects of other lowdimensional PIMs emerging with suitable electronic transport for photovoltaic applications. Furthermore, our findings suggest that significant defect densities may limit the photovoltaic performance of devices based on the BiOI thin films.…”
Section: = [ + ]mentioning
confidence: 99%
“…The first-principles simulation attributed the phonon modes at 1.65 and 2.88 THz to Bi–I vibrations, whereas the mode at 8.88 THz was suggested to originate from in-plane vibration of O atoms; however, no theoretical assignment of the peak we observe at 3.75 THz has been made to date. Complementary Raman investigations have been reported for single crystals of BiOI revealing additional Raman-active phonon modes at 50 cm –1 (1.50 THz) and 86 cm –1 (2.58 THz) …”
mentioning
confidence: 96%
“…Crucially, BiOI also features high stability and a favorable electronic structure, i.e., antibonding nature of frontier orbitals, potentially leading to defect tolerance . BiOI crystallizes in a layered tetragonal matlockite structure with stacks of [I-O-Bi-O-I] sheets held together in the [001] direction by weak van der Waals interactions. , Owing to its layered structure, it is a highly anisotropic material with low effective charge-carrier masses along the [I-O-Bi-O-I] planes and high effective masses across the planes. ,,, Thus, crystal orientation (with planar layers growing perpendicular to the charge extraction layers) is crucial for efficient charge-carrier extraction in BiOI-based solar cells. However, despite a successful demonstration by Jagt et al of a highly oriented growth of BiOI with vertically aligned planes connecting electrodes, the device demonstrated a PCE of only 2%, making an investigation into the nature of the charge-carrier mobilities, localization, and recombination in thin BiOI films a highly topical subject of research.…”
mentioning
confidence: 99%
“…Despite the highly promising photocatalytic properties of bismuth oxyhalides, − only a handful of studies have focused on photovoltaic applications. − Given its wide bandgap of around ∼1.8–1.9 eV, , bismuth oxyiodide (BiOI) is well suited to tandem photovoltaic applications, for example, as a top-cell absorber layer in combination with a Si-bottom cell . First-principles calculations have predicted BiOI to have an indirect bandgap (featuring the conduction band minimum in the Γ-R line and valence band maximum within the Z-R line of the Brillouin zone) ∼40 meV lower than the direct bandgap . While a direct bandgap is generally considered ideal for photovoltaic applications, the presence of an indirect bandgap lying close to the direct transition has been theoretically linked to an advantage in photovoltaic performance (facilitated by a balance between enhanced charge-carrier extraction and strong band-edge absorption) .…”
Following the emergence of lead halide perovskites (LHPs)
as materials
for efficient solar cells, research has progressed to explore stable,
abundant, and nontoxic alternatives. However, the performance of such
lead-free perovskite-inspired materials (PIMs) still lags significantly
behind that of their LHP counterparts. For bismuth-based PIMs, one
significant reason is a frequently observed ultrafast charge-carrier
localization (or self-trapping), which imposes a fundamental limit
on long-range mobility. Here we report the terahertz (THz) photoconductivity
dynamics in thin films of BiOI and demonstrate a lack of such self-trapping,
with good charge-carrier mobility, reaching ∼3 cm2 V–1 s–1 at 295 K and increasing
gradually to ∼13 cm2 V–1 s–1 at 5 K, indicative of prevailing bandlike transport.
Using a combination of transient photoluminescence and THz- and microwave-conductivity
spectroscopy, we further investigate charge-carrier recombination
processes, revealing charge-specific trapping of electrons at defects
in BiOI over nanoseconds and low bimolecular band-to-band recombination.
Subject to the development of passivation protocols, BiOI thus emerges
as a superior light-harvesting semiconductor among the family of bismuth-based
semiconductors.
The remarkable success of lead halide perovskites (LHPs) in photovoltaics and other optoelectronics is significantly linked to their defect tolerance, although this correlation remains not fully clear. The tendency of LHPs to decompose into toxic lead‐containing compounds in the presence of humid air calls for the need of low‐toxicity LHP alternatives comprising of cations with stable oxidation states. To this aim, a plethora of low‐dimensional and wide‐bandgap perovskite‐inspired materials (PIMs) are proposed. Unfortunately, the optoelectronic performance of PIMs currently lags behind that of their LHP‐based counterparts, with a key limiting factor being the high concentration of defects in PIMs, whose rich and complex chemistry is still inadequately understood. This review discusses the defect chemistry of relevant PIMs belonging to the halide elpasolite, vacancy‐ordered double perovskite, pnictogen‐based metal halide, Ag‐Bi‐I, and metal chalcohalide families of materials. The defect‐driven optical and charge‐carrier transport properties of PIMs and their device performance within and beyond photovoltaics are especially discussed. Finally, a view on potential solutions for advancing the research on wide‐bandgap PIMs is provided. The key insights of this review will help to tackle the commercialization challenges of these emerging semiconductors with low toxicity and intrinsic air stability.
Metal thio(seleno)phosphates are renowned for their multifaceted physical characteristics and versatile applications, particularly in optoelectronics. In detection applications, a low and stable dark current is crucial, enhancing the sensitivity and signal‐to‐noise ratio of detectors. Herein, a van der Waals layered material has synthesized, CuInP2Se6. Despite its nanometric scale, 2D CuInP2Se6 detector transcends the conventional absorption inefficiencies tied to ultrathin materials. It delivers exceptional ultraviolet–visible detection, characterized by an ultralow, stable dark current of 150 fA, and a noise power density of 27.7 fA Hz−1/2 at room temperature. The in‐depth investigation reveals a responsivity of 4.47 A W−1, an external quantum efficiency of 1369%, a special detectivity of 1.44 × 1013 Jones, and a rapid response speed of 280 µs, positioning it at the pinnacle of 2D photodetector performance. The CuInP2Se6’s ultralow, stable dark current paves the way for X‐ray detection, achieving an unprecedented sensitivity of 1.32 × 105 µC Gyair−1 cm−2 and a low detection limit of 0.15 µGyair s−1. Furthermore, 2D CuInP2Se6 detector exhibits a remarkable image‐sensing capability, adeptly capturing intricate patterns with high resolution. This discovery indicates its promise in revolutionizing integrated micro/nano optoelectronic devices, opening avenues for advancements in light and X‐ray detection and imaging technologies.
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