“…Lift-off CIGS solar cells with an alternative-substrate/ epoxy/Au/CIGS/CdS/ZnO/ITO/NiCr-Al-grid structure based on the stacked layers were completed using our baseline process. 12) The active cell area was 0.12 cm 2 (0:2 Â 0:6 cm 2 ). The process temperature for the CdS deposition was 80 C. ZnO, In 2 O 3 :Sn (ITO), and NiCr-Algrid were deposited without intentional substrate heating, resulting in process temperatures below 100 C. Thus, the process temperatures after the attachment of the alternative substrates were below 100 C, indicating the possibility of the use of low-thermal-tolerance substrate materials as low as 100 C. As a reference, a CIGS solar cell with an SLG/ Mo/CIGS/CdS/ZnO/ITO/NiCr-Al-grid structure, i.e., a standard cell without the lift-off process, was also prepared.…”