Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures

McLean, C.J.; Marsh, J.H.; Rue, R.M. De La; Bryce, A.C.; Garrett, B.; Glew, R.W.

doi:10.1049/el:19920705

Cited by 51 publications

(19 citation statements)

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“…Subsequently there will be fewer defects created when the defects start to build up. This agrees with the experimental observation that the degree of intermixing is not so much dependent to the number of pulses for long irradiation time [8]. Equation 1 can therefore be expressed as:…”

Section: Introductionsupporting

confidence: 88%

“…For an extended cavity laser, with active and passive section lengths of L a and L p , respectively, a new threshold current density J ECLth is required. The ratio of the current densities is thus [11]   [ 8 ] where J AALth is the threshold current density for a laser with a zero-length passive, and κ is the coupling coefficient between the active and passive sections of the laser. The value of nΓg o was taken to be 30 cm -1 .…”

Section: Integrated Devicesmentioning

confidence: 99%

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Direct writing of multiple-wavelength chip in InGaAs-InGaAsP structure using pulsed laser irradiation

2004

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In this paper, we report a simple laser direct writing method using pulsed photoabsorption-induced disordering (PPAID) to create high spatial bandgap selectivity and high processed material quality multiple-wavelength chip in InGaAsInGaAsP heterostructures. Using this intermixing technology, we have achieved a spatial bandgap selectively of better than 2.5µm from a two-section InGaAs-InGaAsP chip with differential wavelength shift of over 120 nm. A theoretical model has been developed to estimate the limit spatial resolution of the PPAID process. Theoretical analysis has also been performed to investigate the relationship between the irradiation conditions and the bandgap shift. Devices such as bandgap tuned lasers, integrated extended cavity lasers, and multiple-wavelength laser chip have also been fabricated and characterized to verify the integration capability of this postgrowth bandgap engineering technique. The quality of the devices fabricated from the intermixed materials was found to be high, indicating that PPAID is a promising process for the fabrication of photonic integrated circuits.

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Section: Introductionsupporting

confidence: 88%

Section: Integrated Devicesmentioning

confidence: 99%

Direct writing of multiple-wavelength chip in InGaAs-InGaAsP structure using pulsed laser irradiation

2004

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“…All the above features make the interdiffused QW (DFQW) an attractive structure for developing polarizationinsensitive modulators. It should be noted that the interdiffused InGaAs-InP QW material has already been studied in some detail [11], [13], [14] and it has been successfully realized in various optical devices, such as waveguides [12] and lasers [15].…”

Section: Introductionmentioning

confidence: 99%

Polarization-insensitive electroabsorptive modulation using interdiffused InGaAs(P)-InP quantum wells

Choy

Li²,

Micallef

1997

IEEE J. Quantum Electron.

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Abstract-This is a theoretical study to demonstrate the use of interdiffusion in the realization of polarization insensitivity at the band-edge. Two InGaAs-InP quantum well as-grown structures have been investigated: one with lattice-matched condition and the other with small as-grown tensile strain (0.15%). The interdiffusion is considered to take place on the Group V (As and P) sublattice only. As a result, a tensile strain is produced which merges the heavy-and light-hole states in order to achieve polarization insensitivity. Criteria to develop polarization-insensitive quantum wells (QW's) using interdiffusion are presented here. When the two-phase interdiffusion mechanism is modeled, the results show that the well barrier interfaces of the QW maintain an abrupt profile while the well width remains constant after interdiffusion. The two interdiffused QW structures considered here can produce polarization insensitive electroabsorption at operation wavelengths around 1.55 m. The one with latticematched condition is particularly attractive since it only requires an easy (high-yield) fabrication process with a simple postprocessing thermal annealing to achieve polarization insensitivity.Index Terms-Diffusion process, electrooptic modulation, optical polarization, quantum-confined Stark effect, quantum-well interdiffusion, quantum-well intermixing, quantum wells, strain layered material.

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“…QWI can be achieved by different techniques like impurity induced intermixing (III) [2], impurity free vacancy diffusion (IFYD) [3], laser induced intermixing (LID) [4], and photoabsorption induced disordering (PAID) [5]. Different QWI based devices have been proposed and demonstrated [6].…”

mentioning

confidence: 99%

Fabrication of F-ion implanted quantum well intermixed waveguide grating

Sonkar

Das

2012

2012 Photonics Global Conference (PGC)

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This paper reports the ion implantation induced quantum well intermixing used to fabricate waveguide gratings for applications at CWDM wavelengths on InGaAsP/InP multi quantum well structure. The waveguide is fabricated using reactive ion etching (methane chemistry) with a surface roughness 2-3nm. Focused ion beam is used to open windows for fluorine implantation on titanium mask followed by anneal under forming gas environment. The transmission spectrum of the waveguide has been measured and found cross talks of -IOdB among the adjacent channels. The insertion loss of the fabricated waveguide gratings is less than 5dB. Keywords-waveguide; grating;quantum well; intermixing· insertion loss ' I. I NTRODUCTION Integration of discrete passive and active optoelectronics devices on a single chip brings numerous benefits in terms of reduced packaging cost, low power consumption, improved thermal and mechanical stability, high component density, and high functionality. Quantum Well Intermixing (QWI) [1] is a powerful technique for the fabrication of monolithic photonic integrated circuits. QWI is a post-growth modification of refractive index through modification of the energy band structure, which makes it, a very attractive technique for optoelectronic integration. It involves interdiffusion of atomic species of quantum well with atomic species in the barriers. QWI can be achieved by different techniques like impurity induced intermixing (III) [2], impurity free vacancy diffusion (IFYD) [3], laser induced intermixing (LID) [4], and photoabsorption induced disordering (PAID) [5]. Different QWI based devices have been proposed and demonstrated [6]. The impurity induced QWI (II-QWI) technique used here, involves impurity implantation and subsequent anneal, and is better suited for device design that are not close to the surface. This paper reports a fabrication and characterization of a single channel InGaAsP/InP multi quantum well (MQW) intermixed waveguide grating at 1570nm and 1590nm coarse wavelength division multiplexing (CWDM) wavelengths. Coupled mode theory [7] for grating and the perturbation analysis is used to calculate the reflection coefficient produced by the QWI. This requires prior calculations of the refractive index of bulk layers and that of the impurity induced MQW layer for different values of operational wavelengths. For the impurity induced MQWs it includes first, a calculation of the interdiffusion profile of the In, As, P and Ga species, followed by solving both the diffusion equation and Schrodinger wave equation's on a region containing quantum well. Finally, the dielectric constant is calculated to obtain the MQW refractive index at an operating wavelength. Atomic interdiffusion between the well and barrier atoms leads to changes in the shape of the quantum well. This modification in shape gives rise to changes in the absorption coefficient, refractive index and band gap. The detailed design analysis of the architecture is presented in [8]. II. E XPERIMENTAL D ETAILS The proposed geometry consi...

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Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures

Cited by 51 publications

References 0 publications

Direct writing of multiple-wavelength chip in InGaAs-InGaAsP structure using pulsed laser irradiation

Direct writing of multiple-wavelength chip in InGaAs-InGaAsP structure using pulsed laser irradiation

Polarization-insensitive electroabsorptive modulation using interdiffused InGaAs(P)-InP quantum wells

Fabrication of F-ion implanted quantum well intermixed waveguide grating

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