Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

Zamchiy, A. O.; Баранов, Е. А.; Merkulova, I. E.; Korolkov, Ilya V.; Vdovin, V. I.; Гутаковский, А. К.; Володин, В. А.

doi:10.1016/j.matlet.2021.129723

Cited by 7 publications

(5 citation statements)

References 15 publications

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“…Кроме того, на процесс AIC a-Si и свойства получаемых пленок poly-Si существенное влияние оказывают примеси (например, кислород) в исходном кремнийсодержащем материале. Были опубликованы единичные исследования по AIC для кислородсодержащих пленок [5,6], которые показали, что проблема влияния кислорода требует более детального изучения.…”

Section: поступило в редакцию 17 мая 2021 г в окончательной редакции ...unclassified

“…1, c). Отметим, что в процессе отжига идет не только кристаллизация кремния, но и алюмотермическая реакция, в результате которой происходит разрыв связи Si−O и дальнейшее окисление алюминия [6], однако оценка теплового эффекта данной реакции требует отдельного рассмотрения.…”

Section: поступило в редакцию 17 мая 2021 г в окончательной редакции ...unclassified

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Влияние Температуры Отжига На Кинетику Процесса Алюминий-Индуцированной Кристаллизации Тонких Пленок Аморфного Субоксида Кремния

Меркулова,

Замчий,

Лунев

et al. 2021

Письма В Журнал Технической Физики

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In this work, the kinetics of aluminum-induced crystallization (AIC) of non-stoichiometric silicon oxide a-SiO0.25 was investigated for annealing temperatures of 370, 385 and 400 °C, as a result of which thin films of polycrystalline silicon were obtained. It is shown that for low annealing temperatures, the surface morphology of the crystalline material is represented by dendric structures corresponding to the growth model with diffusion-limited aggregation. In addition, with an increase in the annealing temperature, the nucleation density increases from 3 to 53 mm–2. From the Arrhenius plot, the activation energy of the AIC process of a-SiO0.25 was obtained for the first time, which was 3.7±0.4 eV.

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Section: поступило в редакцию 17 мая 2021 г в окончательной редакции ...unclassified

Влияние Температуры Отжига На Кинетику Процесса Алюминий-Индуцированной Кристаллизации Тонких Пленок Аморфного Субоксида Кремния

Меркулова,

Замчий,

Лунев

et al. 2021

Письма В Журнал Технической Физики

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“…An important feature of the material obtained by ALILE using a-SiO x is the absence of hillocks in its structure after annealing, which is important for the subsequent use of poly-Si in applications. A further increase in the oxygen content in the initial a-SiO x led to the complete oxidation of aluminum to form the γ-Al 2 O 3 phase [40]. In addition, the incorporation of Al into the SiO 2 substrate was observed, which was also accompanied by its oxidation.…”

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confidence: 98%

Polycrystalline Silicon Thin Films for Solar Cells via Metal-Induced Layer Exchange Crystallization

Zamchiy

Баранов

2022

Coatings

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“…In addition, AIC of a-Si and properties of the obtained poly-Si films are strongly affected by impurities (e. g., oxygen) in the initial silicon-containing material. A few reports on AIC investigation for oxygen-containing films have been published [5,6] and showed that the problem of the oxygen influence needs more detailed study.…”

mentioning

confidence: 99%

“…Notice that in annealing not only the silicon crystallization takes place but also an alumothermal reaction causing the Si−O bond rupture and further oxidation of aluminum [6].…”

mentioning

confidence: 99%

Effect of annealing temperature on the kinetics of aluminum-induced crystallization of amorphous silicon suboxide thin films

Merkulova

Zamchiy

Lunev

et al. 2022

Technical Physics Letters

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In this work, the kinetics of aluminum-induced crystallization (AIC) of non-stoichiometric silicon oxide a-SiO0.25 was investigated for the case of annealing at temperatures of 370, 385 and 400oC, as a result of which thin films of polycrystalline silicon were obtained. It is shown that, at low annealing temperatures, the surface morphology of the crystalline material is represented by dendritic structures corresponding to the growth model with diffusion-limited aggregation. In addition, with increasing annealing temperature, the nucleation density increases from 3 to 53 mm-2. From the Arrhenius plot, the activation energy of the a-SiO0.25 AIC was obtained for the first time and appeared to be 3.7± 0.4 eV. Keywords: aluminum-induced crystallization, silicon suboxide thin films, polycrystalline silicon, activation energy.

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Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

Cited by 7 publications

References 15 publications

Влияние Температуры Отжига На Кинетику Процесса Алюминий-Индуцированной Кристаллизации Тонких Пленок Аморфного Субоксида Кремния

Влияние Температуры Отжига На Кинетику Процесса Алюминий-Индуцированной Кристаллизации Тонких Пленок Аморфного Субоксида Кремния

Polycrystalline Silicon Thin Films for Solar Cells via Metal-Induced Layer Exchange Crystallization

Effect of annealing temperature on the kinetics of aluminum-induced crystallization of amorphous silicon suboxide thin films

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