Layer-by-layer thinning of two-dimensional materials
Phuong V. Pham,
The-Hung Mai,
Huy-Binh Do
et al.
Abstract:Etching technology – one of the representative modern semiconductor device makers – serves as a broad descriptor for the process of removing material from the surfaces of various materials, whether partially or entirely.
“…74 This method is a gentle and controlled process and can minimize damage, preserving the intrinsic properties of graphene. 75 ALD can potentially create high aspect ratio nanopores with smooth sidewalls, which is advantageous for applications like filtration and sensing where a precise pore geometry is essential. Therefore, ALD-produced art etched graphene is necessary for the creation of nanoscale electronics.…”
Section: Summary and What Is The Next Path Of The Art Etching?mentioning
Various Euclidean and non-Euclidean geometries of graphene patterns obtained during art etching process of precisely integrated CVD growing/etching using hydrocarbons (CH4, C3H8, C2H6, etc.), Ar, and H2.
“…74 This method is a gentle and controlled process and can minimize damage, preserving the intrinsic properties of graphene. 75 ALD can potentially create high aspect ratio nanopores with smooth sidewalls, which is advantageous for applications like filtration and sensing where a precise pore geometry is essential. Therefore, ALD-produced art etched graphene is necessary for the creation of nanoscale electronics.…”
Section: Summary and What Is The Next Path Of The Art Etching?mentioning
Various Euclidean and non-Euclidean geometries of graphene patterns obtained during art etching process of precisely integrated CVD growing/etching using hydrocarbons (CH4, C3H8, C2H6, etc.), Ar, and H2.
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