Layer-by-layer growth of GaN induced by silicon

Munkholm, A.; Thompson, Carol; Murty, M. V. R. K.; Eastman, J. A.; Auciello, O.; Stephenson, G. B.; Fini, P.; DenBaars, Steven P.; Speck, James S.

doi:10.1063/1.1309023

Cited by 37 publications

(21 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This reaction occurs only at elevated temperatures and is not present during low temperature seed layer growth even when GaN is grown at low temperatures directly on Si. Si outdiffusion from the substrate through the growing layer is assumed to cause the poor morphology [21,22] since high Si concentrations lead to a deteriorated GaN growth and rough surfaces [23,24]. We observed that cracking or particles can also initiate the etching reaction.…”

Section: Introductionmentioning

confidence: 81%

GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

181

111

View full text Add to dashboard Cite

Nowadays, GaN‐based devices are usually grown on sapphire or silicon‐carbide substrates. These are either insulating or very expensive and not available in large diameter. A well‐conducting low‐cost alternative is silicon also enabling the integration of optoelectronics or high‐power electronics with Si‐based electronics. The main problem limiting a fast progress of GaN growth on silicon is the thermal mismatch of GaN and Si leading to cracks even below device‐relevant layer thicknesses. In the last few years, since the first demonstration of a molecular beam epitaxy grown GaN‐based light emitting diode on Si in 1998 the activities in research of GaN on Si increased dramatically. Meanwhile, several concepts to lower stress, avoid cracks, and improve the material quality exist. Meanwhile the material quality has improved significantly and is about as good as on sapphire so that it is only a question of time until GaN‐based devices on Si come into market. This article gives a review on the latest developments in group‐III nitride growth on Si by metal organic vapor phase epitaxy.

show abstract

Section: Introductionmentioning

confidence: 81%

GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

181

111

View full text Add to dashboard Cite

show abstract

“…75 It has also been suggested that Si induces roughness 76 and cracks, 77 and it might segregate at the surface. 78 This degradation of the layers has been attributed to the formation of Si 3 N 4 precipitates when the layers are deposited under N-rich conditions. 79 In our case, for thick GaN or Al x Ga 1−x N ͑x Յ 0.65͒ layers grown by PAMBE under Ga-rich conditions, we do not observe any perturbation of the Ga kinetics during GaN growth in presence of Si.…”

Section: Effect Of Si Dopingmentioning

confidence: 99%

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Kandaswamy¹,

Guillot²,

Bellet‐Amalric³

et al. 2008

Journal of Applied Physics

177

175

View full text Add to dashboard Cite

We have studied the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well ͑MQW͒ structures for intersubband optoelectronics in the near infrared. The samples under study display infrared absorption in the 1.3-1.9 m wavelength range, originating from the photoexcitation of electrons from the first to the second electronic level in the QWs. A commonly observed feature is the presence of multiple peaks in both intersubband absorption and interband emission spectra, which are attributed to monolayer thickness fluctuations in the quantum wells. These thickness fluctuations are induced by dislocations and eventually by cracks or metal accumulation during growth. The best optical performance is attained in samples synthesized with a moderate Ga excess during the growth of both the GaN QWs and the AlN barriers without growth interruptions. The optical properties are degraded at high growth temperatures ͑Ͼ720°C͒ due to the thermal activation of the AlN etching of GaN. From the point of view of strain, GaN/AlN MQWs evolve rapidly to an equilibrium average lattice parameter, which is independent of the substrate. As a result, we do not observe any significant effect of the underlayers on the optical performance of the MQW structure. The average lattice parameter is different from the expected value from elastic energy minimization, which points out the presence of periodic misfit dislocations in the structure. The structural quality of the samples is independent of Si doping up to 10 20 cm −3 . By contrast, the intersubband absorption spectrum broadens and blueshifts with doping as a result of electron-electron interactions. This behavior is independent of the Si doping location in the structure, either in the QWs or in the barriers. It is found that the magnitude of the intersubband absorption is not directly determined by the Si concentration in the wells. Instead, depending on the Al mole fraction of the cap layer, the internal electric field due to piezoelectric and spontaneous polarization can deplete or induce charge accumulation in the QWs. In fact, this polarization-induced doping can result in a significant and even dominant contribution to the infrared absorption in GaN/AlN MQW structures.

show abstract

“…Because the island shape is controlled by step edge energy, the surfactant behavior of dopants such as Si may have a large effect on the surface morphology. 18 See supplementary material for additional discussion of the experimental methods and data fitting. …”

mentioning

confidence: 99%

Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Perret

Highland

et al. 2017

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the ( 0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1210] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate G and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate G −n , with an exponent n = 0.25 ± 0.02. Results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.

show abstract

Layer-by-layer growth of GaN induced by silicon

Cited by 37 publications

References 15 publications

GaN-Based Devices on Si

GaN-Based Devices on Si

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Contact Info

Product

Resources

About