Layer and size distribution control of CVD-grown 2D MoS2 using ALD-deposited MoO3 structures as the precursor

Demirtaş, Mustafa; Odaci, Cem; Shehu, Yahaya; Perkgöz, Nihan Kosku; Ay, F.

doi:10.1016/j.mssp.2019.104880

Cited by 28 publications

(16 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although ALD has the promise of thin-film fabrication, there are currently very few studies on ALD application in MoS 2 membrane development. ALD has been applied in the deposition of MoS 2 in several applications [134][135][136][137][138][139] . Its use for water desalination needs further study to benefit from its huge potentials.…”

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

Towards the realisation of high permi-selective MoS2 membrane for water desalination

et al. 2023

View full text Add to dashboard Cite

Climate change and its related side effects are generating a demand for innovative ways to enhance desalination performance by adopting cost-effective and energy-efficient membrane materials. Molybdenum disulphide (MoS2), a two-dimensional (2D) material, holds the potential to address the deficiency of the current polymeric reverse osmosis (RO) membrane by maximizing the water-energy nexus. The nanoscale thickness of the MoS2 membrane promises better water permeability benefiting from the small diffusion length of the transport of the molecules while maintaining good chemical and mechanical robustness. Although many advantages have been projected, the experimental realization of such near-atomic thickness has not been fully explored because of the technological difficulties associated with the production. This review first highlights the remarkable combination of the ion’s rejection and permeability properties of the MoS2 membrane by discussing two distinct reported approaches for using MoS2 as a membrane for water desalination. Subsequently, the engineering challenges of the MoS2 membrane scalability for water desalination are discussed. Lastly, the possible opportunities for a well-controlled fabrication process critical to achieving and advancing MoS2 membranes from research laboratories to the industrial-scale application are outlined. We aim to provide a collective understanding of the realization of a high permi-selective MoS2 membrane for water desalination.

show abstract

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

Towards the realisation of high permi-selective MoS2 membrane for water desalination

et al. 2023

View full text Add to dashboard Cite

show abstract

“…[52][53][54] Furthermore, MoS 2 , which is a widely used TMC, has been synthesized from MoO 3 grown by PE-ALD. MoO 3 films with specific thicknesses were deposited using Mo(CO) 6 and oxygen (O 2 ) plasma as precursors on sapphire (Figure 1c) [55,56] and then sulfurized to MoS 2 films. [55] The thickness of the MoS 2 film was controlled by varying the number of MoO 3 ALD cycles, and the color of the sapphire wafer changed with increasing number of MoS 2 layers (Figure 1d).…”

Section: Chalcogenization Of Ald-based Tmosmentioning

confidence: 99%

Atomic‐Layer‐Deposition‐Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

et al. 2021

View full text Add to dashboard Cite

V, Fe, Co, and Ni chalcogenides exhibit diverse stoichiometric phases with different electrical properties. [28][29][30] For example, TiS 3 is a semiconductor, while TiS 2 exhibits metallic properties. [30,31] Owing to their electrical conductivity, metallic TMCs can be used for energy conversion (including the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER)) and energy storage (Li-ion batteries (LIBs), Na-ion batteries (NIBs), and supercapacitors). [29,32] Industrially compatible synthesis methods and applications are of key importance in the research of new materials. Therefore, atomic layer deposition (ALD)-based 2D TMC materials, which are applicable in industries, have been investigated. [33][34][35][36] Initially, 2D TMCs were mechanically exfoliated to determine their single-crystal characteristics. [11,20] However, the large-area synthesis and control of the layer number of TMCs are crucial. [2,37] ALD, which is a suitable synthesis method for 2D TMCs, is based on the surface reactions of the alternately supplied vapor-phase precursors. [38,39] Because it is one of the most powerful deposition methods for synthesizing uniform thin films on large areas, the next-generation low-power/ high-efficiency electronic and energy applications of materials synthesized/modified by ALD processes have been studied. [38,39] For industrial applications, the electrical, optical, and physical properties of 2D TMCs need to be improved. [18,[40][41][42][43] In addition to the synthesis of 2D TMCs, the ALD method can be used to modify 2D TMCs. In particular, the performance of 2D TMCs can be improved by depositing other materials on 2D TMCs via ALD. [44] By depositing metal oxide thin films or metal nanoparticles on 2D TMCs by ALD, the electrical properties of 2D TMC materials can be precisely controlled, the catalyst efficiency can be modulated, and strain can be induced to change the physical properties of the 2D TMCs. [45][46][47] However, because of their unique structures, ALD on 2D TMCs is quite challenging. For example, the film growth behavior on 2D TMCS is significantly different from the film growth behavior on 3D materials during ALD because of the absence of chemical sites on 2D TMCs. [48][49][50][51] Therefore, for thin film deposition on 2D TMCs by ALD, researchers have focused on improving the uniformity of thin films or synthesizing low-dimensional nanomaterials on 2D TMCs.Herein, the synthesis of 2D TMCs by ALD is reviewed and the synthesis methods are classified based on different types of ALD methods. The synthesis of TMCs by the ALD of transition Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigation of industry-compatible synthesis techniques is of key importance. In this respect, it is important to study 2D TMC materials synthesized by th...

show abstract

“…Additionally, ALD can also provide control over the texture and topography of the films in some cases. Mo(CO) 6 and oxygen (O 2 ) plasma have been used to deposit MoO 3 ultrathin film on sapphire for MoS 2 optimization [ 16 , 17 , 18 ]. Additionally, researchers have explored the synthesis of 2D MoS 2 and WS 2 from transition metal oxides (TMOs) using different metal–organic precursors.…”

Section: Introductionmentioning

confidence: 99%

Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors

et al. 2023

View full text Add to dashboard Cite

Ultrathin MoO3 semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO3/n-Si via an ALD system of few nanometers, we utilized the preparation of an ultrathin MoO3 film at temperatures of 100, 150, 200, and 250 °C. The effect of the depositing temperatures on using bis(tbutylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum source for highly stable UV photodetectors were reported. The ON–OFF and the photodetector dynamic behaviors of these samples under different applied voltages of 0, 0.5, 1, 2, 3, 4, and 5 V were collected. This study shows that the ultrasmooth and homogenous films of less than a 0.30 nm roughness deposited at 200 °C were used efficiently for high-performance UV photodetector behaviors with a high sheet carrier concentration of 7.6 × 1010 cm−2 and external quantum efficiency of 1.72 × 1011. The electronic parameters were analyzed based on thermionic emission theory, where Cheung and Nord’s methods were utilized to determine the photodetector electronic parameters, such as the ideality factor (n), barrier height (Φ0), and series resistance (Rs). The n-factor values were higher in the low voltage region of the I–V diagram, potentially due to series resistance causing a voltage drop across the interfacial thin film and charge accumulation at the interface states between the MoO3 and Si surfaces.

show abstract

Layer and size distribution control of CVD-grown 2D MoS2 using ALD-deposited MoO3 structures as the precursor

Cited by 28 publications

References 37 publications

Towards the realisation of high permi-selective MoS2 membrane for water desalination

Towards the realisation of high permi-selective MoS2 membrane for water desalination

Atomic‐Layer‐Deposition‐Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors

Contact Info

Product

Resources

About