Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale

Lehmann, Toni; Trempa, M.; Meissner, Η.; Zschorsch, Markus; Reimann, C.; Friеdrich, J.

doi:10.1016/j.actamat.2014.01.050

Cited by 39 publications

(9 citation statements)

References 11 publications

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“…The damaged structures are analyzed then microscopically. [10]). Single monocrystalline diamond particles of irregular shape and different size or pieces of a wire with embedded diamond particles are fixed on the grinding wheel.…”

Section: Introductionmentioning

confidence: 93%

Surface damage and mechanical strength of silicon wafers

Würzner

Buchwald

Möller

2015

Phys. Status Solidi C

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The fracture strength of silicon wafers used for photovoltaic and microelectronic applications mainly depends on the damage structure, which is introduced on the surface during processing of the wafers. The present paper investigates the formation and development of the damage structure by scratching, which occurs during grinding processes or when sawing with diamond coated wires. The basic scratching process has been studied with a newly developed scratch technique, where test parameters comparable to a real process could be used. Single scratch tests have been performed with diamond particles on monocrystalline silicon wafers with a defined surface orientation and under different applied forces. The resulting microcrack structure, which develops under the surface, has been investigated by confocal laser scanning microscopy, scanning electron microscope and Raman spectroscopy. Details of the shape, depth and distance of the cracks have been obtained by high quality sample cross sections. The orientations of the main microcrack planes are determined

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Section: Introductionmentioning

confidence: 93%

Surface damage and mechanical strength of silicon wafers

Würzner

Buchwald

Möller

2015

Phys. Status Solidi C

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“…Several studies of Laue diffraction have also been carried out under laboratory conditions using the latest X-ray source and detector technologies. A diffraction apparatus in sidereflection geometry named Laue Scanner has been developed by Lehmann et al (2014) to perform orientation mapping, which serves as an alternative to electron backscatter diffraction (EBSD) experiments. Similarly, a compact version of laboratory microLaue transmission diffraction has been proposed to determine grain orientations and strain in a polycrystalline sample (Lynch et al, 2007(Lynch et al, , 2017(Lynch et al, , 2019.…”

Section: Introductionmentioning

confidence: 99%

A laboratory transmission diffraction Laue setup to evaluate single-crystal quality

Arnaud¹,

Guediche²,

Remacha³

et al. 2020

J Appl Crystallogr

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A scanning laboratory Laue transmission setup is developed to probe extended quasi-monocrystalline samples. Orientation mapping is achieved by controlling the collimation of the incident beam and scanning the position of the specimen. An automated indexing algorithm for transmission Laue patterns is presented, together with a forward simulation model adapted for a laboratory setup. The effect of the main parameters of the system is studied with the aim of achieving exposure times of the order of one second. Applications are presented to probe the orientation of an extended part and detect disoriented regions within the bulk. Finally, the analysis of diffraction spot shapes shows that the misorientation within the illuminated volume can be measured, and a new method is proposed to evaluate its complete mean lattice rotation tensor.

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“…Thereby, x and y coordinates of a multiplicity of different reflections are used. Recently, a Laue scanner for automatic grain detection was presented for the first time (Lehmann et al, 2014), which combines the classical approach with a motorized sample stage. For a spatial resolution of 300 mm the measurement time was 20 s for one measurement spot.…”

Section: Introductionmentioning

confidence: 99%

Microstructural investigations of SrTiO₃single crystals and polysilicon using a powerful new X-ray diffraction surface mapping technique

et al. 2015

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In the research work described here, single‐crystalline SrTiO3 has been used as a model system to facilitate the development of a new qualitative characterization method for the nondestructive identification of small‐angle boundaries in bulk single crystals. Subgrain misorientations with a lower limit in the range between 40 and 100′′ were reliably identified. For scientists and engineers working in the field of single‐crystal growth it is often indispensable to continuously check the structural quality of the grown bulk crystals, which is usually time consuming or challenging for large single crystals. This article presents in detail how a spatially resolved micro X‐ray fluorescent device can be used for the identification of subgrains and merely a one‐side‐planarized sample of nearly arbitrary geometry is needed. The approach presented combines high‐speed measurements and full sample area coverage with a high spatial resolution of 25 µm. The resolution is limited by the spot size of the focused X‐ray beam. The Bremsstrahlung of the excitation source interacts with the crystals, and because of the instrument geometry it is possible to detect Bragg reflections. These reflections can be found at specific energies and can be displayed in two‐dimensional diffraction intensity maps. These maps were used for the qualitative analysis of the crystal domains. The results obtained by this new approach were verified by rocking curve measurements and by defect‐selective etching studies. Ultrafast large‐area mappings on widely used polysilicon were additionally performed to demonstrate the potential of the developed method for use in industrial applications.

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Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale

Cited by 39 publications

References 11 publications

Surface damage and mechanical strength of silicon wafers

Surface damage and mechanical strength of silicon wafers

A laboratory transmission diffraction Laue setup to evaluate single-crystal quality

Microstructural investigations of SrTiO₃single crystals and polysilicon using a powerful new X-ray diffraction surface mapping technique

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Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale

Cited by 39 publications

References 11 publications

Surface damage and mechanical strength of silicon wafers

Surface damage and mechanical strength of silicon wafers

A laboratory transmission diffraction Laue setup to evaluate single-crystal quality

Microstructural investigations of SrTiO3single crystals and polysilicon using a powerful new X-ray diffraction surface mapping technique

Contact Info

Product

Resources

About

Microstructural investigations of SrTiO₃single crystals and polysilicon using a powerful new X-ray diffraction surface mapping technique