Lattice thermal conductivity and chemical bond in the hypovalent two-cation semiconductors A1SbC 2 6 and TlB5C 2 6

Bazakutsa, V. A.; Vasileva, Margreta; Ustimenko, V. N.; Mokhir, L. M.

doi:10.1007/bf00860993

Cited by 5 publications

(7 citation statements)

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“…Here Θ D is the Debye temperature determined in the present transport experiment. As shown in Figure 5, the temperature dependence of 1/µ H ∝ 1/τ agrees well with the formula, which yields Θ D = 113 ± 14 K. Note that Θ D agrees with the Debye temperature determined from the specific heat [22]. The result indicates that the scattering was dominated by acoustic phonons.…”

Section: Results and Analysessupporting

confidence: 82%

Precise determination of two-carrier transport properties in the topological insulatorTlBiSe2

et al. 2015

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We report the electric transport study of the three-dimensional topological insulator TlBiSe2. We applied a newly developed analysis procedure and precisely determined two-carrier transport properties. Magnetotransport properties revealed a multicarrier conduction of high-and low-mobility electrons in the bulk, which was in qualitative agreement with angle-resolved photoemission results [K. Kuroda et al., Phys. Rev. Lett. 105, 146801 (2010)]. The temperature dependence of the Hall mobility was explained well with the conventional Bloch-Grüneisen formula and yielded the Debye temperature ΘD = 113 ± 14 K. The results indicate that the scattering of bulk electrons is dominated by acoustic phonons.

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Section: Results and Analysessupporting

confidence: 82%

Precise determination of two-carrier transport properties in the topological insulatorTlBiSe2

et al. 2015

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“…Room temperature lattice thermal conductivity (κ lat ) vs the average bond angle (α̅) for X–M–X bonds in A i M j X k compounds (A = Cu, Ag or alkali metal, M = As, Sb or Bi, and X = S or Se). ,− …”

Section: Results and Discussionmentioning

confidence: 99%

“…We summarized the room temperature lattice thermal conductivity (κ lat ) vs the average X–M–X bond angle (α̅) of all available related compounds (M = As, Sb or Bi, X = S or Se) − as presented in Figure . All of these compounds are located in three distinct regions.…”

Section: Results and Discussionmentioning

confidence: 99%

“…Finally, the temperature-dependent thermoelectric figure of merit (ZT) for Cu 4 Bi 4 S 9 , Cu 4 Bi 4 Se 9 , and the selected sulfides and selenides are depicted in Figure . ,− The ZT values of Cu 4 Bi 4 S 9 and Cu 4 Bi 4 Se 9 increase with increasing temperatures. Benefiting from its better σ and lower κ tot , Cu 4 Bi 4 Se 9 shows a maximum ZT of about 0.24 at ∼530 K parallel to SPS pressure, which is about 19 times higher than that of Cu 4 Bi 4 S 9 (0.0088).…”

Section: Results and Discussionmentioning

confidence: 99%

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Cu₄Bi₄Se₉: A Thermoelectric Symphony of Rattling, Anharmonic Lone-pair, and Structural Complexity

Jiang

Jia

Chen

et al. 2019

ACS Appl. Mater. Interfaces

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Thermoelectric technology, enabling an environmentally friendly direct heat to electricity conversion, provides a possible alternative energy solution. To obtain a higher thermoelectric conversion efficiency, a larger dimensionless figure of merit ZT is required, which is, however, very difficult owing to the mutually restricted and even reversely correlated key property parameters. Herein, we report for the first time the thermoelectric properties of novel Cu 4 Bi 4 S 9 and Cu 4 Bi 4 Se 9 materials with complicated orthorhombic Pnma structures. Cu 4 Bi 4 Se 9 exhibits an extremely low lattice thermal conductivity of about 0.29−0.35 W m −1 K −1 that is mainly ascribed to the high lattice anharmonicity coming from the synergistic effect of the crystal structure complexity, soft Cu−Se bonds with lower bonding energy, rattling of the Cu atoms, and the high anharmonicity of Bi atoms carrying stereochemically active lone-pair electrons. In spite of its poor electrical conductivity of 7.33 S cm −1 , Cu 4 Bi 4 Se 9 realizes a power factor of about 1.37 μW cm −1 K −2 at ∼530 K, and a figure of merit, ZT ∼0.24 at ∼530 K. Such a value is comparable with those of the Cu/Ag-Bi/Sb-S/Se-based ternary compounds, particularly, the 19 times higher ZT improvement with respect to the isostructural Cu 4 Bi 4 S 9 suggests that the enhancing factors mentioned above play significant roles.

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“…This value is not too high for layered compounds [24][25][26], as typical reported values for θ are ∼100 K [27]. These were obtained using measurements of the thermal conductivity and the layered (quasi-two-dimensional) structure of TlBiS 2 was not taken into account.…”

Section: Electrical Propertiesmentioning

confidence: 98%

Piezo- and Ferroelectric Properties of Self-Assembled PbTiO₃ Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition

Okaniwa

Fujisawa

Shimizu

et al. 2005

Jpn. J. Appl. Phys.

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TlBiS 2 is a narrow-gap semiconductor with a layered structure, isoelectronically analogous to PbS. Large single crystals were grown by the Bridgman-Stockbarger method from the melt and characterized by x-ray diffraction. The lattice parameters were determined and the discrepancy between those already reported was removed. From IR reflectivity measurements in the plasma region, the number of carriers was calculated. Also a strong anisotropy of the electrical conductivity was detected and the narrow-gap character of the material was supported by electrical measurements in the range of 10-300 K.

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Lattice thermal conductivity and chemical bond in the hypovalent two-cation semiconductors A1SbC 2 6 and TlB5C 2 6

Cited by 5 publications

References 1 publication

Precise determination of two-carrier transport properties in the topological insulatorTlBiSe2

Precise determination of two-carrier transport properties in the topological insulatorTlBiSe2

Cu₄Bi₄Se₉: A Thermoelectric Symphony of Rattling, Anharmonic Lone-pair, and Structural Complexity

Piezo- and Ferroelectric Properties of Self-Assembled PbTiO₃ Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition

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Lattice thermal conductivity and chemical bond in the hypovalent two-cation semiconductors A1SbC 2 6 and TlB5C 2 6

Cited by 5 publications

References 1 publication

Precise determination of two-carrier transport properties in the topological insulatorTlBiSe2

Precise determination of two-carrier transport properties in the topological insulatorTlBiSe2

Cu4Bi4Se9: A Thermoelectric Symphony of Rattling, Anharmonic Lone-pair, and Structural Complexity

Piezo- and Ferroelectric Properties of Self-Assembled PbTiO3 Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition

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Product

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Cu₄Bi₄Se₉: A Thermoelectric Symphony of Rattling, Anharmonic Lone-pair, and Structural Complexity

Piezo- and Ferroelectric Properties of Self-Assembled PbTiO₃ Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition