Lattice sites of ion implanted Li in indium antimonide

Hofsäß, H.; Wahl, Ulrich; Restle, M.; Ronning, Carsten; Recknagel, E.; Jahn, S.G.

doi:10.1016/0168-583x(94)95865-3

Cited by 13 publications

(2 citation statements)

References 31 publications

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“…Such shifts may indicate long-range diffusion of 8 Li and diffusion widths of a few thousand Å are clearly visible [24]. Since in the Ge experiment less than 5 keV shift occured in all spectra, we conclude that the mean depth was not shifted by more than a few hundred Å up to the maximum measuring temperature of 440 K. Hence a major redistribution of 8 Li due to long-range diffusion did not occur.…”

Section: Resultsmentioning

confidence: 74%

Alpha-emission channeling investigations of the lattice location of Li in Ge

Wahl¹,

Jahn²,

Restle³

et al. 1996

Nuclear Instruments and Methods in Physics Research Section B:

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The α-emission channeling and blocking technique is a direct method for lattice site determination of radioactive atoms in single crystals. Position-sensitive detection of emitted α particles provides an efficient means of carrying out such experiments at very low doses (10 10 -10 11 implanted probe atoms per spectrum). Comparison of the experimental data to Monte Carlo simulations of complete twodimensional channeling patterns (e.g. ±2ϒ around <100>, <110> and <211> axes, which also includes all relevant planar directions) allows for straight-forward identification and rather accurate quantitative determination of occupied lattice sites, while at the same time the energy spectrum of emitted α particles gives information on the probe atom depth distribution. AbstractThe α-emission channeling and blocking technique is a direct method for lattice site determination of radioactive atoms in single crystals. Position-sensitive detection of emitted α particles provides an efficient means of carrying out such experiments at very low doses (10 10 -10 11 implanted probe atoms per spectrum).Comparison of the experimental data to Monte Carlo simulations of complete two-dimensional channeling patterns (e.g. ±2ϒ around <100>, <110> and <211> axes, which also includes all relevant planar directions) allows for straight-forward identification and rather accurate quantitative determination of occupied lattice sites, while at the same time the energy spectrum of emitted α particles gives information on the probe atom depth distribution. We illustrate this for the case of ion implanted 8 Li (t _ =0.8 s) in Ge, where we identify mainly tetrahedral Li at room temperature, and bond-centered Li at slightly elevated temperature.

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Section: Resultsmentioning

confidence: 74%

Alpha-emission channeling investigations of the lattice location of Li in Ge

Wahl¹,

Jahn²,

Restle³

et al. 1996

Nuclear Instruments and Methods in Physics Research Section B:

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“…5,6 Recently, in Li implanted InSb, it was established that the Li dopants were electrically active immediately after the implantation. 7 But, in these studies the energies of the incident ions used were in the range of 60 keV and there is no report on the transport and optical properties of irradiated and annealed n-type InSb wafers. Furthermore, there has been growing interest in the bombardment of materials with MeV energy ions due to higher penetration depths.…”

Section: Introductionmentioning

confidence: 99%

Effect of lithium ion irradiation on the transport and optical properties of Bridgman grown n-type InSb single crystals

Dixit

Rodrigues

Bhat

et al. 2001

Journal of Applied Physics

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Single crystal (100) wafers of n-InSb were implanted with 50 MeV Li3+ ions at various fluences ranging from 1010 to 1014 ions/cm2 at room temperature. Investigations of the optical, electrical, and structural properties of the as-grown, irradiated, annealed wafers were carried out by infrared and Raman spectroscopies, Hall measurements, and high resolution x-ray diffraction (HRXRD). In the case of samples irradiated with an ion fluence of 1.6×1014 ions/cm2, electrical measurements at 80 K reveal that there is a decrease in carrier concentration from 8.5×1015 (for unirradiated) to 1.1×1015/cm3 and an increase in mobility from 5.4×104 to 1.67×105 cm2/V s. The change in carrier concentration is attributed to the creation of electron trap centers induced by ion beam irradiation and the increase in mobility to the formation of electrical inactive complexes. Nevertheless, even with the irradiation at 1.6×1014 ions/cm2 fluence the crystalline quality remains largely unaffected, as is seen from HRXRD and Raman studies.

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Coincidence Techniques

Hofsäß¹

1996

Forward Recoil Spectrometry

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Lattice sites of ion implanted Li in indium antimonide

Cited by 13 publications

References 31 publications

Alpha-emission channeling investigations of the lattice location of Li in Ge

Alpha-emission channeling investigations of the lattice location of Li in Ge

Effect of lithium ion irradiation on the transport and optical properties of Bridgman grown n-type InSb single crystals

Coincidence Techniques

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