2022
DOI: 10.1039/d2tc00627h
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Lattice-site engineering in ZnGa2O4:Cr3+ through Li+ doping for dynamic luminescence and advanced optical anti-counterfeiting

Abstract: To develop reliable optical anti-counterfeiting materials, higher requirements are put forward for innovative anti-counterfeiting phosphors, which are hardly observed under natural light but recognizable under specified conditions. Herein, novel multimode...

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Cited by 34 publications
(26 citation statements)
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“…The results show that only the O orbital levels contribute to the valence band maximum, whereas both the O and Ga orbital levels contribute significantly to the conduction band minimum, consistent with previous reports. 22,30 The calculated bandgap of a perfect ZGO crystal (2.27 eV) is smaller than the experimental value (4.47 eV) (Fig. 6c).…”
Section: Resultsmentioning
confidence: 63%
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“…The results show that only the O orbital levels contribute to the valence band maximum, whereas both the O and Ga orbital levels contribute significantly to the conduction band minimum, consistent with previous reports. 22,30 The calculated bandgap of a perfect ZGO crystal (2.27 eV) is smaller than the experimental value (4.47 eV) (Fig. 6c).…”
Section: Resultsmentioning
confidence: 63%
“…Referring to the ionic radii, Li + /Ga 3+ ions preferably occupy Zn 2+ sites, but the specific occupations need to be determined by a variety of structural detection methods. 11,22,30…”
Section: Resultsmentioning
confidence: 99%
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