Lattice parameters of Zn1−xMnxSe and tetrahedral bond lengths in AII1−xMnxBVI alloys

Abstract

This paper reports the results of lattice parameter measurements on the ternary semiconductor alloy Zn1−xMnxSe over the range 0≤x≤0.57. We find that the mean cation-cation distance increases linearly with manganese concentration x according to Vegard’s Law. It is also noted that this linear dependence occurs across the region in which the alloy changes crystal structure from zinc blende (x≤0.30) to wurtzite (0.33≤x). These observations are compared with the behavior of the crystal lattice as a function of composition in other AII1−xMnxBVI alloys. A fairly unifed pattern of behavior emerges, relating the lattice parameters and bond lengths for the entire family of these materials. In addition, this analysis provides an experimentally determined value of the tetrahedral radius of manganese.

Lattice parameter and elastic constants of cubic Zn 1− x Mn x Se epilayers grown by molecular‐beam epitaxy

“…As expected, a 0 increases linearly with the Mn concentration. For comparison, results of other groups [7,8] are also shown. Our measurements agree very well with the data published by Yoder-Short et al [7] (dashed line), while the values determined by Kolod-ziejski et al (squares) are slightly but systematically higher [8].…”

Effect of substrate temperature on polycrystalline Cd0.9Zn0.1Te thin films studied by Raman scattering spectroscopy

“…The ternary alloy Cd 1-x Zn x Te (CZT) is a IIB-VIA compound semiconductor, in which Zn occupies Cd sites. Due to the wide range between the band gap energy of the binary compounds, this alloy has a great potential in opto-electronic devices, such as solar cells, optical windows, photodetectors, light emitting diodes, optical memory devices, X-ray and gamma ray detectors [1][2][3][4]. And also it is mainly used as the top layer in the high efficiency tandem solar cell structures.…”

Optical and opto‐electronic properties of polycrystalline Cd0.96Zn0.04Te thin films

“…Cd 1-x Zn x Te is a technologically important IIB-VIA compound semiconductor, in which Zn occupies Cd sites. Due to the band gap engineering of Cd 1-x Zn x Te, this alloy has a great potential in opto-electronic devices, such as solar cells, optical windows, photodetectors, light emitting diodes, optical memory devices and X-ray and gamma ray detectors [1,2,3]. With the particular composition of x = 0.04, Cd 1-x Zn x Te nearly lattice match with Hg 1-y Cd y Te (MCT) for all values of y, so it is mainly used as the substrate material for the growth of MCT infrared focal plane arrays (IRFPAs) [4].…”